DotFETs: MOSFETs strained by a single SiGe dot in a low-temperature ELA technology

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Integration of MOSFETs with SiGe dots as stressor material

Al mediated solid phase epitaxy of silicon on insulator

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

Application of Laser Annealing in the EU FP6 Project D-DotFET

Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET

Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

Investigation and characterization of silicon nitride thin films deposited by ECR-CVD plasma for Microelectromechanical systems application