Person | TU Delft Repository

JZ

JJ Zhang

3 records found

1

Authored

Integration of MOSFETs with SiGe dots as stressor material

Journal article (2011) - L.K. Nanver, V. Jovanovic, L Miglio, H Kosina, A Marzegalli, G Vastola, G Mussler, J Stangl, G Bauer, J. van der Cingel, E Bonera, C Biasotto, J Moers, D Gruetzmacher, JJ Zhang, N Hrauda, M Stoffel, F Pezzoli, OG Schmidt

X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

Journal article (2009) - N Hrauda, JJ Zhang, J Stangl, A Rehman-Khan, G Bauer, M Stoffel, OG Schmist, V. Jovanovic, L.K. Nanver

X-ray diffraction study of the composition and strain fields in buried SiGe islands

Journal article (2009) - N Hrauda, JJ Zhang, M Stoffel, J Stangl, G Bauer, A Rehman-Khan, V Holy, OG Schmist, V. Jovanovic, L.K. Nanver