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Integration of MOSFETs with SiGe dots as stressor material

Journal article (2011) - L.K. Nanver, V. Jovanovic, L Miglio, H Kosina, A Marzegalli, G Vastola, G Mussler, J Stangl, G Bauer, J. van der Cingel, E Bonera, C Biasotto, J Moers, D Gruetzmacher, JJ Zhang, N Hrauda, M Stoffel, F Pezzoli, OG Schmidt

Journal article (2009) - N Hrauda, JJ Zhang, J Stangl, A Rehman-Khan, G Bauer, M Stoffel, OG Schmist, V. Jovanovic, L.K. Nanver

Journal article (2009) - N Hrauda, JJ Zhang, M Stoffel, J Stangl, G Bauer, A Rehman-Khan, V Holy, OG Schmist, V. Jovanovic, L.K. Nanver

Journal article (2007) - G Katsaros, M Stoffel, A Rastelli, OG Schmidt, K Kern, J Tersoff

Journal article (2006) - G Katsaros, A Rastelli, K Kern, M Stoffel, G Isella, H von Kanel, AM Bittner, J Tersoff, U Denker, OG Schmidt, G Costantini

Journal article (2006) - G Katsaros, A Rastelli, M Stoffel, G Costantini, O Schmidt, K Kern, J Tersoff, E Muller, H von Kanel

Journal article (2006) - A Rastelli, M Stoffel, OG Schmidt, G Katsaros, J Tersoff, U Denker, T Merdzhanova, GS Kar, G Costantini, K Kern, H von Kanel