Integration of MOSFETs with SiGe dots as stressor material

Journal article (2011)

Authors

L. K. Nanver Electronic Components, Technology and Materials
V. Jovanovic Electronic Components, Technology and Materials
C Biasotto Electronic Components, Technology and Materials
J Moers External organisation
D Gruetzmacher External organisation
JJ Zhang External organisation
N Hrauda External organisation
M Stoffel External organisation
F Pezzoli External organisation
OG Schmidt External organisation
L Miglio External organisation
H Kosina External organisation
A Marzegalli External organisation
G Vastola External organisation
G Mussler External organisation
J Stangl External organisation
G Bauer External organisation
J. van der Cingel Electronic Components, Technology and Materials
E Bonera External organisation
Research Group
Electronic Components, Technology and Materials
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Published Date

2011

Language

English

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Research Group

Electronic Components, Technology and Materials

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