Silicon-based technology for integrated waveguides and mm-wave systems

Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna

Silicon-filled rectangular waveguides and frequency scanning antennas for mm-wave integrated systems

Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

Integration of MOSFETs with SiGe dots as stressor material

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Suppression of corner effects in wide channel triple gate bulk finfets

Ultra-high aspect ratio FinFet technology

Analysis of subthreshold conduction in short channel recessed source/drain UTB SOI MOSFETs

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications