Silicon-based technology for integrated waveguides and mm-wave systems

Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna

Silicon-filled rectangular waveguides and frequency scanning antennas for mm-wave integrated systems

Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Integration of MOSFETs with SiGe dots as stressor material

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Suppression of corner effects in wide channel triple gate bulk finfets

Analysis of subthreshold conduction in short channel recessed source/drain UTB SOI MOSFETs

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations