Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Poljak, M; Jovanovic, V.; Suligoj, T

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Conference paper (2010)

Authors

M Poljak External organisation

V. Jovanovic Electronic Components, Technology and Materials

T Suligoj External organisation

Research Group

Electronic Components, Technology and Materials

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Published Date

2010

Language

English

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Research Group

Electronic Components, Technology and Materials

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