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n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article (2010)

Authors

V. Jovanovic Electronic Components, Technology and Materials
C Biasotto Electronic Components, Technology and Materials
LK Nanver Electronic Components, Technology and Materials
J Moers External organisation
D Gruetzmacher External organisation
J Gerharz External organisation
G Mussler External organisation
J. van der Cingel Electronic Components, Technology and Materials
J. Zhang Electronic Components, Technology and Materials
G Bauer External organisation
OG Schmidt External organisation
L Miglio External organisation
Research Group
Electronic Components, Technology and Materials
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Published Date

2010

Language

English

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Research Group

Electronic Components, Technology and Materials

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