n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article (2010)

Authors

V. Jovanovic Electronic Components, Technology and Materials

C Biasotto Electronic Components, Technology and Materials

LK Nanver Electronic Components, Technology and Materials

J Moers External organisation

D Gruetzmacher External organisation

J Gerharz External organisation

G Mussler External organisation

J. van der Cingel Electronic Components, Technology and Materials

J. Zhang Electronic Components, Technology and Materials

G Bauer External organisation

OG Schmidt External organisation

L Miglio External organisation

Research Group

Electronic Components, Technology and Materials

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Published Date

2010

Language

English

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Research Group

Electronic Components, Technology and Materials

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