Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Conference paper (2011)

Authors

M Poljak External organisation
V. Jovanovic Electronic Components, Technology and Materials
T Suligoj External organisation
Research Group
Electronic Components, Technology and Materials
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Published Date

2011

Language

English

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Research Group

Electronic Components, Technology and Materials

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