C-V profiling of ultra-shallow junctions using step-like background profiles

Deep p+ junctions formed by drive-in from pure boron depositions

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Analytical Carrier Transport Model for Arbitrarily Shallow p-n Junctions

SILICON DOPING TECHNIQUES USING CHEMICAL VAPOR DOPANT DEPOSITION

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

Analytical carrier transport model for arbitrary shallow p-n junctions

Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Ultrashallow defect-free junction formation by excimer laser annealing

Enabling low-distortion varactors for adaptive transmitters

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

Special RF/microwave devices in silicon-on-glass technology

RF/microwave device fabrication in silicon-on-glass technology

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

Design of an RF power Harvester in a silicon-on-glass technology

A 67 dBm OIP multi-stacked junction varactor

Ultra-Shallow Dopant Diffusion from Pre-deposited RPCVD Monolayers of Arsenic and Phosphorus

Profile Engineering of Decreasing Arsenic Doping in Silicon RPCVD