Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Popadic, M; Scholtes, T.L.M.; de Boer, W.B.; Sarubbi, F; Nanver, L.K.

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Journal article (2009)

Authors

M Popadic Electronic Components, Technology and Materials -

T.L.M. Scholtes Electronic Components, Technology and Materials -

W.B. de Boer Electronic Components, Technology and Materials - , Old - EWI Sect. ECTM

F Sarubbi Electronic Components, Technology and Materials -

L.K. Nanver Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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http://resolver.tudelft.nl/uuid:9855121b-320e-4184-a5df-9db55e96b564

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Published Date

2009

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials