Advancing data assimilation in operational hydrologic forecasting: progresses, challenges, and emerging opportunities

Single-grain Si TFTs for high-speed flexible electronics

Single-Grain Si TFTs for flexible electronics and 3D-ICs

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate

Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process

Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100C

Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100C

Crystallographic Orientation- and Location-controlled Si Single Grains on an Amorphous Substrate for Large Area Electronics

Ingle-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

Influences of the capping layer on the grain growth with micro-Czochralski process during excimer-laser crystallization

<100>textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

Preparation of large poly-Si grains by excimer laser crystallization of sputtered a-Si film with processing temperature of 100 °C

Preferred surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation

Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C

Effects of capping layer on grain growth with ¿-Czochralski process during excimer laser crystallization

Preferred Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

Effects of crystallographic orientation of single-crystalline seed on ¿-Czochralski process in excimer-laser crystallization