Advancing data assimilation in operational hydrologic forecasting: progresses, challenges, and emerging opportunities

Single-grain Si TFTs for high-speed flexible electronics

Single-Grain Si TFTs for flexible electronics and 3D-ICs

Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100C

Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

Crystallographic Orientation- and Location-controlled Si Single Grains on an Amorphous Substrate for Large Area Electronics

Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100C

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate

Ingle-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

Influences of the capping layer on the grain growth with micro-Czochralski process during excimer-laser crystallization

Preparation of large poly-Si grains by excimer laser crystallization of sputtered a-Si film with processing temperature of 100 °C

Preferred Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

Effects of capping layer on grain growth with ¿-Czochralski process during excimer laser crystallization

Preferred surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation

<100>textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C

Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

Effects of crystallographic orientation of single-crystalline seed on ¿-Czochralski process in excimer-laser crystallization