Synchronized rectifiers offer promising solutions for piezoelectric energy harvesting; however, achieving the promised energy extraction performance necessitates using either a bulky inductor or multiple large capacitors, which cannot be on-chip integrated and increase the system form factor. This article introduces a fully integrated sequenced synchronized switch harvesting on capacitors (3SHC) rectifier. The input piezoelectric transducer (PT) uses microelectromechanical system technology. The cantilever is equally split into multiple strongly coupled subcantilevers, with each cantilever treated as an individual PT connected to the proposed rectifier. The 3SHC rectifier cyclically operates multiple times to synchronously flip the voltage of each cantilever sequentially. With the proposed design, all the flying capacitors only need to match the capacitance of each subcantilever; hence, they can be fully integrated on-chip. The design is fabricated using standard 0.18 μ m CMOS technology. Measurement results show that the proposed 3SHC rectifier attains an 80% voltage flip efficiency and achieves a 730% power enhancement compared to a full-bridge rectifier.

Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this technology was measured up to 500 °C, and the key parameters, such as threshold voltage, field-effect mobility, and channel-length modulation parameters, were extracted. A 4-bit flash data converter, consisting of 266 transistors, is implemented with this technology and demonstrates correct operation up to 400 °C. Finally, the gate oxide quality is investigated by time-dependent dielectric breakdown measurements at 500 °C. A field-acceleration factor of 4.4 dec/(MV/cm) is obtained by applying the E model.

Silicon carbide (SiC) is recognized as an excellent material for microelectromechanical systems (MEMS), especially those operating in challenging environments, such as high temperature, high radiation, and corrosive environments. However, SiC bulk micromachining is still a challenge, which hinders the development of complex SiC MEMS. To address this problem, we present the use of a carbon nanotube (CNT) array coated with amorphous SiC (a-SiC) as an alternative composite material to enable high aspect ratio (HAR) surface micromachining. By using a prepatterned catalyst layer, a HAR CNT array can be grown as a structural template and then densified by uniformly filling the CNT bundle with LPCVD a-SiC. The electrical properties of the resulting SiC-CNT composite were characterized, and the results indicated that the electrical resistivity was dominated by the CNTs. To demonstrate the use of this composite in MEMS applications, a capacitive accelerometer was designed, fabricated, and measured. The fabrication results showed that the composite is fully compatible with the manufacturing of surface micromachining devices. The Young’s modulus of the composite was extracted from the measured spring constant, and the results show a great improvement in the mechanical properties of the CNTs after coating with a-SiC. The accelerometer was electrically characterized, and its functionality was confirmed using a mechanical shaker. (Figure presented.)

The demand for accurate temperature sensing in extreme temperatures is increasing. Traditional silicon-based integrated temperature sensors usually cannot survive above 200 °C. Many researchers have started to focus on semiconductors with a large bandgap. Among them, silicon carbide (SiC) is the most promising one. Nevertheless, most reported SiC sensors are in the form of discrete components and are not compatible with integrated electronics. In this work, we demonstrate an open 4H-SiC CMOS technology, and the fabrication steps are detailed. The temperature sensing elements in this technology, including resistors based on different implanted layers and MOSFETs, are characterized up to 600 °C. At room temperature, the resistive-based elements demonstrate large negative temperature coefficients of resistance (TCRs). With increasing temperature, the TCR starts to decrease and even becomes positive. The TCR change is due to the interplay between increasing dopant ionization rate and decreasing mobility as a function of temperature. The resistance change with temperature fits well into the Steinhart-Hart model and second-order polynomial equation. The p-type diode-connected MOSFET has a sensitivity of 4.35 mV/°C with a good linearity. The nMOS-based sensor has a maximum sensitivity of -9.24 mV/°C but a compromised linearity. The characterization of these sensing elements provides important results for potential users who will work on SiC integrated temperature sensing with this technology.

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.

The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When the high current was applied, the dewetted copper forming around the edge was observed at the cathode of the conductor. Furthermore, the effect of temperature and conductor size on local dewetting was investigated. Our proposed mechanism for local dewetting is in good agreement with experimental findings.

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density is 0.53 mA/cm2. The maximum sensitivity of the p-n diode is 3.04 mV/°C. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.

The application of pressure sensors in harsh environments is typically hindered by the stability of the material over long periods of time. This work focuses on the design and fabrication of surface micromachined Pirani gauges which are designed to be compatible with state-of-the-art Silicon Carbide CMOS technology. Such an integrated platform would boost harsh environment compatibility while reducing the required packaging complexity. An analytical model was derived describing the design variables of the Pirani gauges followed by Finite Element Analysis. The Pirani gauges were fabricated in a CMOS compatible cleanroom with a process employing only three masks, thus suitable for mass production. The SiC-based Pirani gauge is far more competitive than the traditional Si-based Pirani gauge in terms of endurance in high-temperature environments. From 25°C to 650°C, the gauge shows a reproducible response to pressure changes and has a maximum sensitivity of $17.63~\Omega $ /Pa at room temperature, and of $1.23~\Omega $ /Pa at 650°C. Additionally, some of the gauges were demonstrated to operate at temperatures up to 750°C.