A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

Journal article (2023)

Authors

J. Mo Electronic Components, Technology and Materials -

J. Li Electronic Components, Technology and Materials -

Y. Zhang Electronic Components, Technology and Materials -

J. Romijn Microelectronics

Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Tobias Erlbacher Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Kouchi Zhang Electronic Components, Technology and Materials -

S. Vollebregt Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1109/LED.2023.3268334

High temperature Temperature sensor Schottky diodes Sensitivity Silicon carbide Linearity Temperature measurement Temperature sensors Temperature distribution P-n diode

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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density is 0.53 mA/cm2. The maximum sensitivity of the p-n diode is 3.04 mV/°C. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.

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