JL
J. Li
5 records found
1
In this article, we provide a comprehensive review of defect formation at the atomic level in interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide traps. We summarize the current theoretical models and experimental observations related to th
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Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study model
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The demand for accurate temperature sensing in extreme temperatures is increasing. Traditional silicon-based integrated temperature sensors usually cannot survive above 200 °C. Many researchers have started to focus on semiconductors with a large bandgap. Among them, silicon carb
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In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determina
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This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of
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