A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices

Li, J.; Shekhar, A.; van Driel, Williem; Zhng, Guoqi

A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices

Journal article (2024)

Authors

J. Li Electronic Components, Technology and Materials -

A. Shekhar DC systems, Energy conversion & Storage -

Williem van Driel Electronic Components, Technology and Materials -

Guoqi Zhng Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Failure mechanisms Acceleration model Silicon carbide (SiC) MOS devices Time-dependent dielectric breakdown (TDDB)

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http://resolver.tudelft.nl/uuid:8e4e9a1b-3940-4884-8dd5-b7ac1aa3c553

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Published Date

2024

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this article, we provide a comprehensive review of defect formation at the atomic level in interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide traps. We summarize the current theoretical models and experimental observations related to these intrinsic defects, as they critically impact device performance and reliability. By integrating theoretical insights with experimental data, this review provides a thorough understanding of the atomic-scale interactions that govern defect formation.

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File under embargo until 16-06-2025