Z. Cui
23 records found
1
Authored
The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during ...
Coupling model of electromigration and experimental verification – Part II
Impact of thermomigration
This paper presented a comprehensive experimental and simulation study for thermomigration (TM) accompanying electromigration (EM) at elevated current densities. Both Blech and standard wafer-level electromigration acceleration test (SWEAT)-like test structures, with aluminum ...
In this paper, we apply the Eshelby's solution to study the effect of passivation layer on electromigration (EM) failure in a conductor. The passivation layer is considered as an elastic material, not a rigid layer anymore. Thus, the deformation and stress evolution in the con ...
Effects of temperature and grain size on diffusivity of aluminium
Electromigration experiment and molecular dynamic simulation
Understanding the atomic diffusion features in metallic material is significant to explain the diffusion-controlled physical processes. In this paper, using electromigration experiments and molecular dynamic (MD) simulations, we investigate the effects of grain size and temper ...
Sulfur-Rich Ageing Mechanism of Silicone Encapsulant Used in LED Packaging
An Experimental and Molecular Dynamic Simulation Study
In a light-emitting diode (LED) package, silicone encapsulant serves as a chip protector and enables the light to transmit, since it exhibits the advantages of high light transmittance, high refractive index, and high thermal stability. However, its reliability is still challe ...
Effects of Defect and Temperature on the Mechanical Performance of WS2
A Multiscale Analysis
This paper analyzes the mechanical properties of tungsten disulfide (WS2) by means of multiscale simulation, including density functional theory (DFT), molecular dynamic (MD) analysis, and finite element analysis (FEA). We first conducted MD analysis to calculate the mechanica ...
Insights into the high-sulphur aging of sintered silver nanoparticles
An experimental and ReaxFF study
In high power electronics packaging, sintered silver nanoparticle joints suffer from thermal-humidity- electrical-chemical joint driven corrosion in extreme environments. In this paper, we conducted aging tests on sintered silver nanoparticles under high-temperature, high-humi ...
In this paper, a recently developed theory - general coupling model of electromigration, is implemented in ANSYS. We first identify several errors provided in ANSYS manual for electromigration modeling. Then the general coupling model is implemented in ANSYS and the detailed d ...
Thermal kinetic and mechanical behaviors of pressure-assisted Cu nanoparticles sintering
A molecular dynamics study
At present, most high-power white Light-emitting diode and laser diode (LED&LD) package is usually constructed by a blue LED&LD chip with a Cerium doped Yttrium Aluminum Garnet (YAG:Ce3+) yellow phosphor, but its color rendering performance is severely chall ...
The interface adhesion of CaAlSiN3
Eu2+ phosphor/silicone used in light-emitting diode packaging: A first principles study
The CaAlSiN3:Eu2+ red phosphor and its silicone/phosphor composite are very promising materials used in the high color rendering white light-emitting diode (LED) packaging. However, the reliabilities of CaAlSiN3:Eu2+ and its composit ...
A three-dimensional (3D) general coupling model for electromigration has been developed with the use of the mass conservation equation. The flux terms that include concentration gradient, electron wind force, stress migration, and thermal migration are considered. The constitu ...
Elliptic Cu-Ag nanoflakes were syntheszied via facile in situ galvanic replacement between prepared Cu particles and Ag ions. Alloy nanoflakes with high purity and uniformity present a size of 700 × 500 nm, with a thinn ...
Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characteri ...
Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built ...