Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

Conference paper (2018)

Authors

Z. Cui Chongqing University, Electronic Components, Technology and Materials - EEMCS
Xianping Chen Student
Xuejun Fan Lamar University
Kouchi Zhang Chongqing University
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2018 Z. Cui, Xianping Chen, Xuejun Fan, Kouchi Zhang
DOI: https://doi.org/10.1109/EuroSimE.2018.8369949
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.