Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application

Conference paper (2023)

Authors

B. Sun Electronic Components, Technology and Materials - EEMCS , China University of Petroleum (East China)
J. Mo Electronic Components, Technology and Materials - EEMCS
Hemin Zhang Katholieke Universiteit Leuven
H.W. van Zeijl Electronic Components, Technology and Materials - EEMCS
W.D. van Driel Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2023 B. Sun, J. Mo, Hemin Zhang, H.W. van Zeijl, W.D. van Driel, Kouchi Zhang
DOI: https://doi.org/10.1109/MEMS49605.2023.10052401
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.

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- Embargo expired in 01-09-2023