This report demonstrates an innovative method to achieve large scale 20 μm pitch Cu-Cu direct bonding, utilizing lithographic stencil printing to transfer small-sized nano-copper (CuNPs) paste and employs a thermocompression method for CuNPs sintering to establish interconnections between copper-pillars and CuNPs bumps. Shear tests were conducted to characterize the bonding strength. High-throughput 20 μm pitch copper-to-copper direct bonding enables lower annealing temperatures for bulk-Cu to bulk-Cu bonding. Lithographic stencil printing is used to transfer the CuNPs paste, followed by sintering of the nanoparticles to establish interconnections. Shear tests and cross-section SEM were conducted to characterize the bonding strength and quality.

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To fulfill the high-temperature application requirement of high-power electronics packaging, Cu nanoparticle sintering technology, with benefits in low-temperature processing and high-melting point, has attracted considerable attention as a promising candidate for the die-attach interconnect. Comprehensive mechanical characterization of the sintered layer at a microscale is necessary to deepen the understanding of the fracture behavior and improve the reliable design of materials. In this study, microscale cantilevers with different notch depths were fabricated in a 20 MPa sintered interconnect layer. Continuous dynamical fracture testing of the microcantilevers was conducted in situ in a scanning electron microscope to detail the failure characteristic of the porous sintered structure. The microscopic fracture toughness of different notched specimens was obtained from the J-integral in the frame of elastic-plastic fracture mechanics. Specimens with deeper notches presented higher resistance to crack extension, while geometry factors of notch-to-width ratio between 0.20 and 0.37 exhibited a relatively stable microscopic fracture toughness ranging from 3.2 ± 0.3 to 3.6 ± 0.1 MPa m^1/2.

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Silicon carbide (SiC) coated vertically aligned carbon nanotubes (VACNT) are attractive material for fabricating MEMS devices as an alternative for bulk micromachining of SiC. In order to examine the mechanical properties of SiC-CNT composites at high temperatures, we fabricated VACNT micro-pillars with different amounts of SiC coating and performed high-temperature micro-pillar compression on these samples. The indentation result shows that the coating can improve the elastic modulus up to three orders of magnitude. Samples were tested at room temperature, 300°C, 600°C, and 900°C under compressive load. No significant degradation of the mechanical properties was observed at elevated temperatures, demonstrating the harsh environment potential of this composite.@en

Electromigration (EM) is a crucial failure mode in Aluminum (Al) interconnection wires those are widely used in high density semiconductor packaging. This study systematically investigated the influence of EM on the mechanical properties of Al interconnects via nanoindentation experiments and molecular dynamics (MD) simulations. The results are list as follows. (1) The indentation depth gradually increases with the increase in indentation load, resulting in a gradual increase and stabilization of the Young’s modulus and hardness of the structure. Within a specific range, the influence of the loading rate on the indentation depth and mechanical properties is relatively small. (2) The region where Young’s modulus of the interconnect decreases correlates with the location where EM-induced voids initiate. EM-induced voids have a direct impact on the material’s mechanical properties, particularly the decrease in Young’s modulus. (3) These EM-induced voids affect the nucleation and formation of dislocations. With the increase in void concentration and indentation depth, The generation and slip of dislocations increase as the void concentration and indentation depth increase, leading to a decrease in the material’s mechanical properties over time. This comprehensive findings expand the knowledge on mechanical behavior degradation of Al interconnects when EM failure occurs, providing a scientific basis for designing and optimizing high density semiconductor packaging.@en

As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.

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Additive manufacturing (AM) or 3D printing is a promising industrial technology that enables rapid prototyping of complex configurations. Powder Bed Fusion (PBF) is one of the most popular AM techniques for metallic materials. Until today, only a few metals and alloys are available for AM, e.g., titanium alloys, the most common of which is Ti-6Al-4V. After optimization of PBF parameters, with or without post processing such as heat treatment or hot isostatic pressing, the printed titanium alloy can easily reach tensile strengths of over 1100 MPa due to the quick cooling of the AM process. However, attributed to the unique features of metallurgical defects and microstructure introduced by this AM process, their fatigue strength has been low, often less than 30% of the tensile strength, especially in very-high-cycle regimes, i.e., failure life beyond 10⁷ cycles. Here, based on our group’s research on the very-high-cycle fatigue (VHCF) of additively manufactured (AMed) Ti-6Al-4V alloys, we have refined the basic quantities of porosity, metallurgical defects, and the AMed microstructure, summarized the main factors limiting their VHCF strengths, and suggested possible ways to improve VHCF performance.

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In this study, we combined finite element method (FEM) based on Ansys and Noesis Optimus software to investigate the effect of bump structures and loading conditions on the electromigration properties of solder bumps in WLCSP. A numerical model considering current density, vacancy concentration, stress and temperature was utilized to calculate the vacancy concentration in solder bumps. The Optimus is an optimization software which can be used to perform the design of experiment (DOE) and sensitivity analysis. To optimize the bump structure, the DOE and response surface modeling (RSM) analysis were performed by using Noesis Optimus. The design optimization based on Noesis Optimus has three main advantages. First, the sensitivity analysis based on DOE results helps to find the most contributing factors. Second, it saves huge time because hundreds of experiments can be executed automatically. Third, it is able to perform evolutionary design optimization directly on RSM to identify the design’s optimal performance point. The maximum and concentration around solder were selected as the index to evaluate the effect of parameter combination on electromigration properties.@en

The trend to 3D and heterogeneous integration enable driving multi-functional blocks in one package. Flip-chip integration is currently playing an important role and is based on solder joints. To overcome the limitations of solder joints, all-copper interconnects have been investigated to meet electrical, thermal, and reliability demands in 3D integration. The underfill process is widely applied in flip-chip encapsulation technology. We propose a novel wafer-scale all-Cu interconnect method combining epoxy-based photo-patternable polymer as self-aligned underfill layer with the patterned copper nanoparticles interconnects. The resulting test wafers were able to pattern 20 µm pitch copper nanoparticle-paste interconnects on both substrates with and without photoimageable polymer. The Cu paste was applied to form the interconnects and was sintered after bonding process. Free-standing nanocopper is sintered to obtain mechanical properties with a Young's modulus of 112 GPa. All-Cu interconnects with diameter of 50 µm and 100 µm were measured to achieve the specific contact resistance, ranging from 1.4 × 10-5O· cm2 to 1.0 × 10-5O· cm2 at different sintering temperature when epoxy-based underfill existing. And its resistivity was 4.54× 10-4 O· cm, compared to 5.86× 10-4O· cn for the all-Cu interconnects without underfill.

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SnBiAgCu solder alloy is an attractive soldering material for temperature-sensitive electronic devices due to its excellent creep properties. This study firstly reports the creep properties of SnBiAgCu solder alloy under different temperatures. Results show that the addition of Bi resulted in better creep resistance compared with that of commercial SAC305 (Sn-3.0Ag-0.5Cu). Secondly, dynamic mechanical analyses were performed to get the storage modulus and glass transition temperature of potting compounds. Finally, a finite element modeling based analysis were used to figure out the different failure mechanism due to the presence of potting materials. The accurate simulation data offers an optimization reference for the selection of solder and potting materials.

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The stress–strain response of sintered silver nanoparticles (AgNP) materials is precisely characterized in order to adapt for numerical analysis and rational design of electronic packaging structures in this study. A framework of crystal plasticity finite element method (CPFEM) is established based on the mechanism of crystal plastic deformation to describe the mesoscopic structural influence of grain evolution on the macroscopic properties of sintered AgNP materials. Material parameters of crystal plasticity are defined and initial orientations are randomly assigned for sintered AgNP grains. To calibrate the mesoscopic mechanical properties of sintered AgNP by the proposed CPFEM, the results of CPFEM simulations and uniaxial tensile tests subjected to different strain rates and temperatures are compared in terms of the stress–strain curves as the critical macroscopic characteristics. The predicted stress and deformation distributions in the polycrystalline structure demonstrate that the significant inhomogeneity of stress and deformation is caused by the different grain orientations of sintered AgNP. Furthermore, we elucidate the fracture mechanism influenced by the temperature and strain rate and also the effect of initial crystal orientation on the plastic strain of sintered AgNP. This study sheds light on the morphology design of sintered AgNP with optimized mechanical properties and fatigue resistance.

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The application of microporous sintered copper (Cu) as a bonding material to replace conventional die-attach materials in power electronic devices has attracted considerable interest. Many previous studies have focused on the effect of processing parameters (temperature, time, pressure) on the microstructure evolution of sintered Cu. However, there are only a few studies with regard to the mechanical properties of sintered Cu. As the die-attach layer undergoes thermal and mechanical stress during its application, it is essential to investigate the micro-scale mechanical properties of sintered Cu. Fracture toughness is a measure of the resistance of a material to crack propagation under predominantly linear-elastic conditions, which is an essential parameter for predicting fracture failure. As cracks and defects are difficult to avoid during fabrication and application processing for sintered Cu, which will definitely cause a significant effect on micromechanical properties. Thus, it is essential to reveal the effect of microstructure on fracture toughess of sintered Cu nanoparticles.@en

Copper nanoparticles (CuNPs) sintering for flip-chip interconnects is a promising solution for 3D and heterogeneous integration to overcome the limitation of solder materials. To this end, we perform the photolithographic stencil printing method to pattern CuNPs, and the form of flip-chip interconnects is completed after CuNPs sintering process. This paper aims to study the effect of sintering processing parameters (time, pressure, temperature) on the mechanical properties of CuNPs bumps when applying the novel method to approach the Cu interconnects. We fabricated seven groups of specimens of sintered CuNPs bumps, built with a diameter of 100 μm and sintered. The nanoindentation tests assessed the mechanical property to get Young's modulus and hardness. Results clarify that Young's modulus is strongly affected by pressure. An suggested combination of parameters (the 25 MPa and 260 °C for 15 min) give the highest modulus of 126 GPa and the hardness of 1.76 GPa. Moreover, the observations by scanning electron microscopy (SEM) reveal the microstructure and porosity evolution versus different processing parameters.

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As a promising technology for high-power and high-temperature power electronics packaging, nanocopper (nanoCu) paste sintering has recently received increasing attention as a die-attachment. The high-temperature deformation of sintered nanoCu paste and its underlying mechanisms challenge the reliability of high-power electronics packaging. In this study, the tensile deformation behaviors of sintered nanoCu paste were firstly characterized by high-temperature tensile tests performed at various temperatures and strain rates ranging from 180 °C to 360 °C, 1 × 10⁻⁴ s⁻¹ to 1 × 10⁻³ s⁻¹ respectively. It was found that the elastic modulus and tensile strength decreased at the higher tensile temperature while the ductility increased accordingly. The highest elastic modulus and tensile strength results were 12.15 GPa and 46.97 MPa, respectively. Second, failure analysis was conducted based on the fracture surface after tensile testing. Recrystallization was revealed as the main factor for ductility improvement. Subsequently, an Anand model was fitted by stress-strain curves to describe the tensile constitutive behavior of the sintered nanoCu paste. Multi-scale modelling techniques also investigated the impact of tensile temperature and strain rate on the tensile response. Molecular dynamics simulation was implemented using a hemispherical Cu nanoparticle model to reveal the properties from an atomistic perspective. In addition, a two-dimensional equivalent model was further established by using a stochastically distributed void morphology. The multi-scale modelling techniques successfully describe the evolution of tensile response to the different tensile temperatures and strain rates. Besides, the equivalent model with random void morphology was demonstrated as the finite element simulation results were highly consistent with the high-temperature tensile experiments.

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The objective of this article is to investigate the thermal-fatigue properties of a commercially available lead-free solder alloy (SnBiAgCu) under the use of different types of potting compounds. Solder alloys with lower silver content are expected to substitute the conventional solder alloys SAC305 (Sn-3.0Ag-0.5Cu). First, the tensile behavior and creep behavior of the SnBiAgCu solder alloys were studied at three temperatures (25, 75, 125). Results show that this type of solder alloys presented higher tensile strength and creep deformation endurance than conventional SAC305 solder alloys. Second, a dynamic mechanical analysis was performed to get the storage modulus and glass transition temperature of three types of potting compounds, which were used in the thermal-fatigue simulation. Third, the experimentally determined material data was used for the averaged strain energy density increment calculated by the finite element method. This simulation approach was selected as damage metrics to evaluate solder interconnect reliability under different combinations of materials. It is found that the application of potting compounds will increase strain energy density significantly when compared with the strain energy density calculated without potting compound, which means that potting compounds will deteriorate the thermal-fatigue reliability of solder interconnects. These accurate data-driven simulation models can in the future form the basis for compact digital twins for predicting useful remaining lifetime.

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