J
JN Burghartz
172 records found
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Modeling of strained CMOS on disposable SiGe dots
Shape impacts on electrical/thermal characteristics
We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts’ relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We s
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This paper reports on fabrication and design considerations of an integrated folded shorted-patch chip-size antenna for applications in short-range wireless microsystems and operating inside the 5¿6 GHz ISM band. Antenna fabrication is based on wafer-level chip-scale packaging (W
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