S

S Fregonese

20 records found

Modeling of strained CMOS on disposable SiGe dots

Shape impacts on electrical/thermal characteristics

We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts’ relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We s ...

A Hicum SOI extension

3D Simulation Study of Strained CMOS based on a disposable SiGe Dot Technology

CNTFET Modeling and Reconfigurable Logic Circuit Design

Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics

A computationally efficient physics-based compact bipolar transistor model for circuit design - Part II: Experimental results

A computationally efficient physics-based compact bipolar transistor model for circuit design - Part I: model formulation

A compact model for HBT on thin film SOI

JFET test structures for monitoring strain-enhanced mobility

Thin ¿lm SOI HBT: A study of the effect of substrate bias on the electrical characteristics

Analysis of CNTFET physical compact model

Prospects for complementary SiGeC BiCMOS on thin-film SOI

A scalable substrate network for HBT compact modeling

A transient measurement setup for electro-thermal characterisation for SiGe HBTs

A transit time model for thin SOI Si/SiGe HBT

Network Analysis for SiGe HBT¿s thermal impedance modelling

Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI

A self-aligned vertical HBT for thin SOI SiGeC BiCMOS

Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI

Study of a 3D thermal characterization of SiGe HBTS