Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics

Fregonese, S; Zhuang, Y; Burghartz, JN

Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics

Journal article (2007)

Authors

S Fregonese Old - EWI Ch. Integrated Sensing Devices

Y Zhuang Old - EWI Ch. Integrated Sensing Devices

JN Burghartz Old - EWI Ch. Integrated Sensing Devices

Research Group

Old - EWI Ch. Integrated Sensing Devices

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Published Date

2007

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Research Group

Old - EWI Ch. Integrated Sensing Devices

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