Computation-in-memory (CIM) using memristors can facilitate data processing within the memory itself, leading to superior energy efficiency than conventional von-Neumann architecture. This makes CIM well-suited for data-intensive applications like neural networks. However, a large number of read operations can induce an undesired resistance change in the memristor, known as read-disturb. As memristor resistances represent the neural network weights in CIM hardware, read-disturb causes an unintended change in the network’s weights that leads to poor accuracy. In this paper, we propose a methodology for read-disturb detection and mitigation in CIM-based neural networks. We first analyze the key insights regarding the read-disturb phenomenon. We then introduce a mechanism to dynamically detect the occurrence of read-disturb in CIM-based neural networks. In response to such detections, we develop a method that adapts the sensing conditions of CIM hardware to provide error-free operation even in the presence of read-disturb. Simulation results show that our proposed methodology achieves up to 2× accuracy and up to 2× correct operations per unit energy compared to conventional CIM architectures.@en

Diabetic retinopathy (DR) is a leading cause of permanent vision loss worldwide. It refers to irreversible retinal damage caused due to elevated glucose levels and blood pressure. Regular screening for DR can facilitate its early detection and timely treatment. Neural network-based DR classifiers can be leveraged to achieve such screening in a convenient and automated manner. However, these classifiers suffer from reliability issue where they exhibit strong performance during development but degraded performance after deployment. Moreover, they do not provide supplementary information about the prediction outcome, which severely limits their widespread adoption. Furthermore, energy-efficient deployment of these classifiers on edge devices remains unaddressed, which is crucial to enhance their global accessibility. In this paper, we present a reliable and energy-efficient hardware for DR detection, suitable for deployment on edge devices. We first develop a DR classification model using custom training data that incorporates diverse image quality and image sources along with improved class balance. This enables our model to effectively handle both on-field variations in retinal images and minority DR classes, enhancing its post-deployment reliability. We then propose a pseudo-binary classification scheme to further improve the model performance and provide supplementary information about the model prediction. Additionally, we present an energy-efficient hardware design for our model using memristor-based computation-in-memory, to facilitate its deployment on edge devices. Our proposed approach achieves reliable DR classification with three orders of magnitude reduction in energy consumption over state-of-the-art hardware platforms.

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Memristor-based computation-in-memory (CIM) can achieve high energy efficiency by processing the data within the memory, which makes it well-suited for applications like neural networks. However, memristors suffer from conductance variation problem where their programmed conductance values deviate from the desired values. Such variations lead to computational errors that result in degraded inference accuracy in CIM-based neural networks. In this paper, we present a mapping-aware biased training methodology to mitigate the impact of conductance variation on CIM-based neural networks. We first determine which conductance states of the memristor are inherently more immune to variation. The neural network is then trained under the constraint that important weights can only take numeric values which directly get mapped to such favorable states. Simulation results show that our proposed mapping-aware biased training achieves up to 2.4× hardware accuracy compared to the conventional training.

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Timely detection of cardiac arrhythmia characterized by abnormal heartbeats can help in the early diagnosis and treatment of cardiovascular diseases. Wearable healthcare devices typically use neural networks to provide the most convenient way of continuously monitoring heart activity for arrhythmia detection. However, it is challenging to achieve high accuracy and energy efficiency in these smart wearable healthcare devices. In this work, we provide architecture-level solutions to deploy neural networks for cardiac arrhythmia classification. We have created a hierarchical structure after analyzing various neural network topologies where only required network components are activated to improve energy efficiency while maintaining high accuracy. In our proposed architecture, we introduce a severity-based classification approach to directly help the users of the wearable healthcare device as well as the medical professionals. Additionally, we have employed computation-in-memory based hardware to improve energy efficiency and area consumption by leveraging in-situ data processing and scalability of emerging memory technologies such as resistive random access memory (RRAM). Simulation experiments conducted using the MIT-BIH arrhythmia dataset show that the proposed architecture provides high accuracy while consuming average energy of 0.11 $\mu$J per heartbeat classification and 0.11 mm2 area, thereby achieving 25× improvement in average energy consumption and 12× improvement in area compared to the state-of-the-art.

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With the rise of deep learning (DL), our world braces for artificial intelligence (AI) in every edge device, creating an urgent need for edge-AI SoCs. This SoC hardware needs to support high throughput, reliable and secure AI processing at ultra-low power (ULP), with a very short time to market. With its strong legacy in edge solutions and open processing platforms, the EU is well-positioned to become a leader in this SoC market. However, this requires AI edge processing to become at least 100 times more energy-efficient, while offering sufficient flexibility and scalability to deal with AI as a fast-moving target. Since the design space of these complex SoCs is huge, advanced tooling is needed to make their design tractable. The CONVOLVE project (currently in Inital stage) addresses these roadblocks. It takes a holistic approach with innovations at all levels of the design hierarchy. Starting with an overview of SOTA DL processing support and our project methodology, this paper presents 8 important design choices largely impacting the energy efficiency and flexibility of DL hardware. Finding good solutions is key to making smart-edge computing a reality.@en

Emerging device technologies such as Resistive RAMs (RRAMs) are under investigation by many researchers and semiconductor companies; not only to realize e.g., embedded non-volatile memories, but also to enable energy-efficient computing making use of new data processing paradigms such as computation-in-memory. However, such devices suffer from various non-idealities and reliability failure mechanisms (e.g., variability, endurance, and retention); these negatively impact the memory robustness and the computation accuracy. This paper discusses the non-idealities and reliability failure mechanisms for RRAM devices, provides an overview on the most popular ones. In addition, it reports detailed anlysis of some of these based on data measurements. Finally, it presents two different mitigation schemes for RRAM based accelerators; one is based on RRAM non-ideality aware quantization and conductance control for neural network accuracy enhancement while the second is based on reliability-aware biased training technique.@en

Analog computation-in-memory (CIM) architecture alleviates massive data movement between the memory and the processor, thus promising great prospects to accelerate certain computational tasks in an energy-efficient manner. However, data converters involved in these architectures typically achieve the required computing accuracy at the expense of high area and energy footprint which can potentially determine CIM candidacy for low-power and compact edge-AI devices. In this work, we present a memory-periphery co-design to perform accurate A/D conversions of analog matrix-vector-multiplication (MVM) outputs. Here, we introduce a scheme where select-lines and bit-lines in the memory are virtually fixed to improve conversion accuracy and aid a ring-oscillator-based A/D conversion, equipped with component sharing and inter-matching of the reference blocks. In addition, we deploy a self-timed technique to further ensure high robustness addressing global design and cycle-to-cycle variations. Based on measurement results of a 4Kb CIM chip prototype equipped with TSMC 40nm, a relative accuracy of up to 99.71% is achieved with an energy efficiency of 115.1 TOPS/W and computational density of 12.1 TOPS/mm2 for the MNIST dataset. Thus, an improvement of up to 11.3X and 7.5X compared to the state-of-the-art, respectively.

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Deep Learning (DL) has recently led to remark-able advancements, however, it faces severe computation related challenges. Existing Von-Neumann-based solutions are dealing with issues such as memory bandwidth limitations and energy inefficiency. Computation-In-Memory (CIM) has the potential to address this problem by integrating processing elements directly into the memory architecture, reducing data movement and enhancing the overall efficiency of the system. In this work, we propose CIM architecture using three distinct emerging technologies. Firstly, a CIM architecture utilizing Ferroelectric Field-Effect Transistors (FeFET) is shown and the resulting errors from the analog compute scheme are injected into the emerging algorithm of Hyperdimensional Computing. Subsequently, we explore Vertical Nanowire Field-Effect Transistors (VNWFETs) based CIM within a 3D computing architecture, demonstrating improved energy efficiency and reconfigurability for CIM. Additionally, we improve the accuracy of the Resistive Random Access Memories (RRAM) based CIM architecture using two mapping-based solutions. These three technologies exhibit non-volatile characteristics, and when integrated into the CIM architecture, they yield significant advantages, including enhanced energy efficiency, reliability, and accuracy in computing processes.

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Resistive random access memory (RRAM) based computation-in-memory (CIM) architectures can meet the unprecedented energy efficiency requirements to execute AI algorithms directly on edge devices. However, the read-disturb problem associated with these architectures can lead to accumulated computational errors. To achieve the necessary level of computational accuracy, after a specific number of read cycles, these devices must undergo a reprogramming process which is a static approach and needs a large counter. This paper proposes a circuit-level RRAM read-disturb detection technique by monitoring real-time conductance drifts of RRAM devices, which initiate the reprogramming when actually it needs. Moreover, an analytic method is presented to determine the minimum conductance detection requirements, and our proposed read-disturb detection technique is tuned for the same to detect it dynamically. SPICE simulation result using TSMC 40 nm shows the correct functionality of our proposed detection technique.@en

This paper addresses one of the directions of the HORIZON EU CONVOLVE project being dependability of smart edge processors based on computation-in-memory and emerging memristor devices such as RRAM. It discusses how how this alternative computing paradigm will change the way we used to do manufacturing test. In addition, it describes how these emerging devices inherently suffering from many non-idealities are calling for new solutions in order to ensure accurate and reliable edge computing. Moreover, the paper also covers the security aspects for future edge processors and shows the challenges and the future directions.@en

Computation-in-memory (CIM) paradigm leverages emerging memory technologies such as resistive random access memories (RRAMs) to process the data within the memory itself. This alleviates the memory-processor bottleneck resulting in much higher hardware efficiency compared to von-Neumann architecture-based conventional hardware. Hence, CIM becomes an attractive alternative for applications like neural networks which require a huge number of data transfer operations in conventional hardware. CIM-based neural networks typically employ bit-slicing scheme which represents a single neural weight using multiple RRAM devices (called slices) to meet the high bit-precision demand. However, such neural networks suffer from significant accuracy degradation due to non-zero Gmin error where a zero weight in the neural network is represented by an RRAM device with a non-zero conductance. This paper proposes an unbalanced bit-slicing scheme to mitigate the impact of non-zero Gmin error. It achieves this by allocating appropriate sensing margins for different slices based on their binary positions. It also tunes the sensing margins to meet the demands of either high accuracy or energy-efficiency. The sensing margin allocation is supported by 2's complement arithmetic which further reduces the influence of non-zero Gmin error. Simulation results show that our proposed scheme achieves up to 7.3× accuracy and up to 7.8× correct operations per unit energy consumption compared to state-of-the-art.

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Next-generation personalized healthcare devices are undergoing extreme miniaturization in order to improve user acceptability. However, such developments make it difficult to incorporate cryptographic primitives using available target tech-nologies since these algorithms are notorious for their energy consumption. Besides, strengthening these schemes against side-channel attacks further adds to the device overheads. Therefore, viable alternatives among emerging technologies are being sought. In this work, we investigate the possibility of using memristors for implementing lightweight encryption. We propose a 40-nm RRAM-based GIFT-cipher implementation using a 1TIR configuration with promising results; it exhibits roughly half the energy consumption of a CMOS-only implementation. More importantly, its non-volatile and reconfigurable substitution boxes offer an energy-efficient protection mechanism against side-channel attacks. The complete cipher takes 0.0034 mm2of area, and encrypting a 128-bit block consumes a mere 242 pJ.@en

Resistive RAM (RRAM) is a promising technology to replace traditional technologies such as Flash, because of its low energy consumption, CMOS compatibility, and high density. Many companies are prototyping this technology to validate its potential. Bringing this technology to the market requires high-quality tests to ensure customer satisfaction. Hence, it is of great importance to deeply understand manufacturing defects and accurately model them to develop optimal tests. This paper presents a holistic framework for defect and fault modeling that enables the development of optimal tests for RRAMs. An overview and classification of RRAM manufacturing defects are provided. Defects in contacts and interconnects are modeled as resistors. Unique RRAM defects, e.g., forming defects, require Device-Aware defect modeling which incorporates the defect's impact on the device's electric properties by adjusting the affected technology and electrical parameters. Additionally, a systematic approach to define the fault space is presented, followed by a methodology to validate this space. With this methodology, accurate fault modeling for contact, interconnect, and forming defects is performed and tests are developed. The tests are able to detect all faults in a time-efficient manner, thereby proving the effectiveness of the framework. Finally, an outlook on future RRAM testing is presented.

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Spin-transfer torque magnetic random access memory (STT-MRAM) based computation-in-memory (CIM) architectures have shown great prospects for an energy-efficient computing. However, device variations and non-idealities narrow down the sensing margin that severely impacts the computing accuracy. In this work, we propose an adaptive referencing mechanism to improve the sensing margin of a CIM architecture for boolean binary logic (BBL) operations. We generate reference signals using multiple STT-MRAM devices and place them strategically into the array such that these signals can address the variations and trace the wire parasitics effectively. We have demonstrated this behavior using an STT-MRAM model, which is calibrated using 1Mbit characterized array. Results show that our proposed architecture for binary neural networks (BNN) achieves up to 17.8 TOPS/W on the MNIST dataset and 130× performance improvement for the text encryption compared to the software implementation on Intel Haswell processor.

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Faster and cheaper computers have been constantly demanding technological and architectural improvements. However, current technology is suffering from three technology walls: leakage wall, reliability wall, and cost wall. Meanwhile, existing architecture performance is also saturating due to three well-known architecture walls: memory wall, power wall, and instruction-level parallelism (ILP) wall. Hence, a lot of novel technologies and architectures have been introduced and developed intensively. Our previous work has presented a comprehensive classification and broad overview of memory-centric computer architectures. In this article, we aim to discuss the most important classes of memory-centric architectures thoroughly and evaluate their advantages and disadvantages. Moreover, for each class, the article provides a comprehensive survey on memory-centric architectures available in the literature.@en

Computation-In-Memory (CIM) using memristor devices provides an energy-efficient hardware implementation of arithmetic and logic operations for numerous applications, such as neuromorphic computing and database query. However, memristor-based CIM suffers from various non-idealities such as conductance drift, read disturb, wire parasitics, endurance and device degradation. These negatively impact the computation accuracy of CIM. It is therefore essential to deal with these non-idealities and fabrication imperfections in order to harness the full potential of CIM. This paper discusses the non-ideality challenges and provides potential solutions. Furthermore, the paper outlines the potential future directions for CIM architectures.@en

Resistive random access memory (RRAM) based computation-in-memory (CIM) architectures are attracting a lot of attention due to their potential in performing fast and energy-efficient computing. However, the RRAM variability and non-idealities limit the computing accuracy of such architectures, especially for multi-operand logic operations. This paper pro-poses a voltage-based differential referencing-in-array scheme that enables accurate two and multi-operand logic operations for RRAM-based CIM architecture. The scheme makes use of a 2T2R cell configuration to create a complementary bitcell structure that inherently acts also as a reference during the operation execution; this results in a high sensing margin. More-over, the variation-sensitive multi-operand (N)AND operation is implemented using complementary-input (N)OR operation to further improve its accuracy. Simulation results for a post-layout extracted 512x512 (256Kb) RRAM-based CIM array show that up to 56 operand (N)OR/(N)AND operation can be accurately and reliably performed as opposed to a maximum of 4 operands supported by state-of-the-art solutions, while offering up to 11.4X better energy-efficiency.

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Emerging non-volatile resistive RAM (RRAM) device technology has shown great potential to cultivate not only high-density memory storage, but also energy-efficient computing units. However, the unique challenges related to RRAM fabrication process render the traditional memory testing solutions inefficient and inadequate for high product quality. This paper presents low-cost design-for-testability (DFT) solutions that augment the testing process and improve the fault coverage. A computation-in-memory (CIM) based DFT is realized to expedite the detection and diagnosis of faults by developing logic designs involving multi-row activation. A novel addressing scheme is introduced to facilitate the diagnosis of faults. Reconfigurable logic designs are developed to detect unique RRAM faults that offer features such as programmable reference generations, period, and voltage of operation. DFT implementations are validated on a post-layout extracted platform and testing sequences are introduced by incorporating the proposed DFTs. Results show that more than 2.3× speedup and better coverage are achieved with 6× area reduction when compared with state-of-the-art solutions.@en

Emerging computation-in-memory (CIM) paradigm offers processing and storage of data at the same physical location, thus alleviating critical memory-processor communication bottlenecks suffered by conventional von-Neumann architecture. Storage of data in a CIM architecture is analog in nature and therefore computation is performed in analog domain i.e. inputs and outputs are analog values. Since the outside computing environment is digital, analog-to-digital converters (ADC) are utilized to perform the output data conversion. However, ADC designs are bulky, power-hungry circuits that are prone to design variations and therefore, play an important role in determining the computing efficiency of CIM architectures. In this paper, we present a scalable and reliable integrate and fire circuit ADC (SRIF-ADC) design for CIM architectures, suitable for stringent power and area constraints. We devise a technique to stabilize the node receiving analog inputs that allows more rows to be activated at the same time, thereby increasing the operand size of input vectors. This allows better scalability in terms of higher parallelism of operations. We employ a self-timed variation-aware design approach and design measures to drastically reduce read disturb of memristor devices that address reliability issues related to the ADC design. In addition, we present a compact, built-in sample-and-hold circuit to replace the large-sized capacitance and built-in weighting technique to alleviate the need for post-processing. For multiply-and-accumulate (MAC) operation, our simulation results show that we can improve the computational parallelism by 3X as well as ADC conversion speed and energy efficiency are improved by 2X and 11.6X, respectively, compared to the state-of-the-art design.

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In-memory computing promises to overcome memory and power walls by allowing efficient computing of operations inside the memory without the need to explicitly transfer operands back and forth to the processor core. This paradigm is enabled by emerging resistive memory technology and the adjustment of the memory periphery to perform the computation. The existing methods to perform in-memory calculations are either bound to a specific technology or do not scale well for complex multi-input functions. In this article, we propose a new technique for in-memory computing using resistive devices to calculate the symmetric Boolean logic operations for any number of inputs. In our proposed method, we first convert the equivalent resistance state that is generated by storing devices to an electrical oscillation, and later, time-based sensing for these oscillations is employed to generate the required output. Since the computation using our proposed technique is based on the oscillations, it can be easily tuned for different computation tasks depending on applications. This is used to implement an efficient column-wise error-correction code (ECC) for in-memory computing. We have performed extensive Monte Carlo simulations to confirm the functionality of our proposed method in the presence of process variation. Compared with state-of-the-art comparative-based schemes, for a two-bit in-memory XOR computation, our proposed technique can improve dynamic energy by 41% and additionally scales well for more number of inputs. Results show a reduction of the parity overhead by 10% in our evaluated memory and an area reduction of 21% compared with conventional ECC circuits.@en