Guaranteeing high-quality test solutions for Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a must to speed up its high-volume production. A high test quality requires maximizing the fault coverage. Detecting permanent faults is relatively simple compared to intermittent faults; the latter are faults (caused by non-environmental conditions) that appear and disappear as a function of time, and are therefore hard to detect. Testing for such faults in STT-MRAMs is even worse considering the Magnetic Tunneling Junction inherent property ‘intrinsic switching stochasticity’, which results in inevitable random write errors. This paper presents a novel Design-for-Testability (DFT) scheme for detecting intermittent faults in STT-MRAMs; it is based on monitoring the write current. The strength of the write current is inversely correlated to the write error rate; when the write current is smaller than the specification, the device is considered faulty. A reduction in the write current can be caused by any defect in the write path of the memory (e.g., interconnects and contacts). Simulation results based on industrial design show that applying DFT yields a superior coverage of intermittent faults compared to functional test methods, such as march tests.@en

Due to the immature manufacturing process, Resistive Random Access Memories (RRAMs) are prone to exhibit new failure mechanisms and faults, which should be efficiently detected for high-volume production. Those unique faults are hard to detect but require specific Design-for-Test (DfT) circuit design. This paper proposes a DfT based on a parallel-reference write circuit that can detect all RRAM array faults during diagnosis, production testing, and its application in the field.@en

Computation-in-memory (CIM) using memristors can facilitate data processing within the memory itself, leading to superior energy efficiency than conventional von-Neumann architecture. This makes CIM well-suited for data-intensive applications like neural networks. However, a large number of read operations can induce an undesired resistance change in the memristor, known as read-disturb. As memristor resistances represent the neural network weights in CIM hardware, read-disturb causes an unintended change in the network’s weights that leads to poor accuracy. In this paper, we propose a methodology for read-disturb detection and mitigation in CIM-based neural networks. We first analyze the key insights regarding the read-disturb phenomenon. We then introduce a mechanism to dynamically detect the occurrence of read-disturb in CIM-based neural networks. In response to such detections, we develop a method that adapts the sensing conditions of CIM hardware to provide error-free operation even in the presence of read-disturb. Simulation results show that our proposed methodology achieves up to 2× accuracy and up to 2× correct operations per unit energy compared to conventional CIM architectures.@en

Resistive random access memory (RRAM) based computation-in-memory (CIM) architectures can meet the unprecedented energy efficiency requirements to execute AI algorithms directly on edge devices. However, the read-disturb problem associated with these architectures can lead to accumulated computational errors. To achieve the necessary level of computational accuracy, after a specific number of read cycles, these devices must undergo a reprogramming process which is a static approach and needs a large counter. This paper proposes a circuit-level RRAM read-disturb detection technique by monitoring real-time conductance drifts of RRAM devices, which initiate the reprogramming when actually it needs. Moreover, an analytic method is presented to determine the minimum conductance detection requirements, and our proposed read-disturb detection technique is tuned for the same to detect it dynamically. SPICE simulation result using TSMC 40 nm shows the correct functionality of our proposed detection technique.@en