Trust is important in public health communication to culturally and linguistically diverse (CALD) communities during pandemics. This empirical research, using quantitative data from 107 foreign nationals at a university in Shanghai, probes into how trust varied in official translation services (OTS) and non-official translation services (NOTS) during COVID-19. Statistical analysis was carried out by IBM SPSS Statistics 26 and it was found that (1) NOTS which are more frequently used are more trusted compared with OTS; (2) NOTS are uncorrelated with demographics while OTS are correlated with demographics, among which education and trust in OTS suggest a linear positive relationship (Sig. = 0.003, β = 0.467), whereas age and trust in OTS suggest a linear negative relationship (Sig. = 0.027, β = −0.348); (3) there is a positive relationship between the frequency of using services and trust, i.e., higher frequency implies higher trust. The findings of this case study can have implications for policy makers and the representatives of CALD communities.@en

Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO₂ -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.

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Resistive Random Access Memories (RRAMs) are now undergoing commercialization, with substantial investment from many semiconductor companies. However, due to the immature manufacturing process, RRAMs are prone to exhibit new failure mechanisms and faults, which should be efficiently detected for high-volume production. Some of those faults are hard-to-detect, and require specific Design-for-Testability (DfT) circuit design. This paper proposes a DfT based on a parallel-reference write circuit that can detect all single-cell RRAM array faults: strong faults (directly causing logic errors) as well as weak faults (caused by parametric deviations). The scheme replaces the regular write driver, and enables the monitoring and comparison of the write current against multiple references during a single write operation. Hence, it serves as a DfT scheme and as a normal write circuit simultaneously. In addition, it enhances production testing speed and online fault detection, while keeping the area overhead low. Furthermore, the DfT is configurable for efficient diagnosis and yield learning. The results of the simulations performed do not only show that the DfT can detect single-cell conventional faults (due to interconnects and contacts) as well as unique RRAM faults (based on silicon data) that have been demonstrated to exist, but also that the DfT is robust to process variations.@en