PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

Conductance along the interface formed by 400 °C pure boron deposition on silicon

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

UV-sensitive low dark-count PureB single-photon avalanche diode

Fabrication of low dark-count PureB single-photon avalanche diodes

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

UV-sensitive low dark-count PureB single-photon avalanche diode

Reverse biasing and breakdown behavior of PureB diodes

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

PureGaB p +n Ge diodes grown in large windows to Si with a sub -300 nm transition region

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

A Ge-on-Si single photon avalanche diode operating in Geiger mode at infrared wavelengths

Simple method to evaluate minority carrier injection levels in schottky diodes

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques