Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Sakic, A.; Qi, L.; Scholtes, T.L.M.; van der Cingel, J.; Nanver, L. K.

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Conference paper (2012)

Authors

A. Sakic Electronic Components, Technology and Materials

L. Qi Electronic Components, Technology and Materials

T.L.M. Scholtes Electronic Components, Technology and Materials

J. van der Cingel Electronic Components, Technology and Materials

L. K. Nanver Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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Published Date

2012

Language

English

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Research Group

Electronic Components, Technology and Materials

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