Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

Journal article (2015)

Authors

A. Sammak Electronic Components, Technology and Materials - EEMCS
L. Qi Electronic Components, Technology and Materials - EEMCS
LK Nanver External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
More Info
expand_more

Published Date

2015

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials