Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Sakic, A.; Qi, L.; Scholtes, T.L.M.; van der Cingel, J.; Nanver, L. K.

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Journal article (2013)

Authors

A. Sakic Electronic Components, Technology and Materials

L. Qi Electronic Components, Technology and Materials

T.L.M. Scholtes Electronic Components, Technology and Materials

J. van der Cingel Electronic Components, Technology and Materials

L. K. Nanver Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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Published Date

2013

Language

English

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Research Group

Electronic Components, Technology and Materials

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