Binary Neural Networks (BNNs) have demonstrated significant advantages in reducing computation and memory costs, all while maintaining acceptable accuracy on various image detection tasks. Thus, BNNs have the potential to support practical cognitive tasks on resource-constrained platforms, such as edge computing devices. To realize this, SRAM-based digital Computation-in-Memory (CIM) has gained growing attention as it overcomes the analog CIM architecture bottlenecks such as limited computing accuracy due to process variation, non-linearity, power and area-hungry Analog-to-Digital Converters (ADCs), etc. However, digital CIM architectures are highly dominated by power-hungry adder-trees, which can nullify the benefits of SRAM-based digital CIM. To address this issue, this paper proposes an adder free SRAM-based digital CIM, AFSRAM-CIM, for BNN acceleration. The proposed CIM architecture utilizes a multi-functional 10-T SRAM cell-based crossbar array and a new energy-efficient approach to perform the popcount operation. Simulation results using the MNIST dataset show that the proposed architecture maintains the state-of-the-art inference accuracy of 99.21% with only 11.86 fJ energy per operation. Moreover, AFSRAM-CIM achieves over 3× energy and ≈17× area savings when compared to the conventional digital CIM approaches.@en

Spiking Neural Networks (SNNs) are Artificial Neural Networks which promise to mimic the biological brain processing with unsupervised online learning capability for various cognitive tasks. However, SNN hardware implementation with online learning support is not trivial and might prove highly inefficient. This paper proposes an energy-efficient hardware implementation for SNN synapses. The implementation is based on parallel-connected Magnetic Tunnel Junction (MTJ) devices and exploits their inherent stochasticity. In addition, it uses a dedicated unsupervised learning rule based on optimized Spike-Timing-Dependent Plasticity (STDP). To facilitate the design of the SNN, its training and evaluation, an open-source Python-based platform is developed; it takes as input the SNN parameters and discrete circuit components, and it automatically generates the associated full netlist in SPICE; moreover, it extracts the simulation results and makes them available in python for evaluation and manipulation. Unlike conventional neuromorphic hardware that relies on simple weight mapping post-off-line training, our approach emphasizes continuous, unsupervised learning, ensuring an energy efficiency of 11.2nW per synaptic update during training and as low as 109fJ/spike during inference.@en

Neuromorphic processors promise low-latency and energy-efficient processing by adopting novel brain-inspired design methodologies. Yet, current neuromorphic solutions still struggle to rival conventional deep learning accelerators' performance and area efficiency in practical applications. Event-driven data-flow processing and near/in-memory computing are the two dominant design trends of neuromorphic processors. However, there remain challenges in reducing the overhead of event-driven processing and increasing the mapping efficiency of near/in-memory computing, which directly impacts the performance and area efficiency. In this work, we discuss these challenges and present our exploration of optimizing event-based neural network inference on SENECA, a scalable and flexible neuromorphic architecture. To address the overhead of event-driven processing, we perform comprehensive design space exploration and propose spike-grouping to reduce the total energy and latency. Furthermore, we introduce the event-driven depth-first convolution to increase area efficiency and latency in convolutional neural networks (CNNs) on the neuromorphic processor. We benchmarked our optimized solution on keyword spotting, sensor fusion, digit recognition and high resolution object detection tasks. Compared with other state-of-the-art large-scale neuromorphic processors, our proposed optimizations result in a 6× to 300× improvement in energy efficiency, a 3× to 15× improvement in latency, and a 3× to 100× improvement in area efficiency. Our optimizations for event-based neural networks can be potentially generalized to a wide range of event-based neuromorphic processors.

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Computation-in-memory (CIM) using memristors can facilitate data processing within the memory itself, leading to superior energy efficiency than conventional von-Neumann architecture. This makes CIM well-suited for data-intensive applications like neural networks. However, a large number of read operations can induce an undesired resistance change in the memristor, known as read-disturb. As memristor resistances represent the neural network weights in CIM hardware, read-disturb causes an unintended change in the network’s weights that leads to poor accuracy. In this paper, we propose a methodology for read-disturb detection and mitigation in CIM-based neural networks. We first analyze the key insights regarding the read-disturb phenomenon. We then introduce a mechanism to dynamically detect the occurrence of read-disturb in CIM-based neural networks. In response to such detections, we develop a method that adapts the sensing conditions of CIM hardware to provide error-free operation even in the presence of read-disturb. Simulation results show that our proposed methodology achieves up to 2× accuracy and up to 2× correct operations per unit energy compared to conventional CIM architectures.@en

Deep Learning (DL) has recently led to remark-able advancements, however, it faces severe computation related challenges. Existing Von-Neumann-based solutions are dealing with issues such as memory bandwidth limitations and energy inefficiency. Computation-In-Memory (CIM) has the potential to address this problem by integrating processing elements directly into the memory architecture, reducing data movement and enhancing the overall efficiency of the system. In this work, we propose CIM architecture using three distinct emerging technologies. Firstly, a CIM architecture utilizing Ferroelectric Field-Effect Transistors (FeFET) is shown and the resulting errors from the analog compute scheme are injected into the emerging algorithm of Hyperdimensional Computing. Subsequently, we explore Vertical Nanowire Field-Effect Transistors (VNWFETs) based CIM within a 3D computing architecture, demonstrating improved energy efficiency and reconfigurability for CIM. Additionally, we improve the accuracy of the Resistive Random Access Memories (RRAM) based CIM architecture using two mapping-based solutions. These three technologies exhibit non-volatile characteristics, and when integrated into the CIM architecture, they yield significant advantages, including enhanced energy efficiency, reliability, and accuracy in computing processes.

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With the rise of deep learning (DL), our world braces for artificial intelligence (AI) in every edge device, creating an urgent need for edge-AI SoCs. This SoC hardware needs to support high throughput, reliable and secure AI processing at ultra-low power (ULP), with a very short time to market. With its strong legacy in edge solutions and open processing platforms, the EU is well-positioned to become a leader in this SoC market. However, this requires AI edge processing to become at least 100 times more energy-efficient, while offering sufficient flexibility and scalability to deal with AI as a fast-moving target. Since the design space of these complex SoCs is huge, advanced tooling is needed to make their design tractable. The CONVOLVE project (currently in Inital stage) addresses these roadblocks. It takes a holistic approach with innovations at all levels of the design hierarchy. Starting with an overview of SOTA DL processing support and our project methodology, this paper presents 8 important design choices largely impacting the energy efficiency and flexibility of DL hardware. Finding good solutions is key to making smart-edge computing a reality.@en

Emerging device technologies such as Resistive RAMs (RRAMs) are under investigation by many researchers and semiconductor companies; not only to realize e.g., embedded non-volatile memories, but also to enable energy-efficient computing making use of new data processing paradigms such as computation-in-memory. However, such devices suffer from various non-idealities and reliability failure mechanisms (e.g., variability, endurance, and retention); these negatively impact the memory robustness and the computation accuracy. This paper discusses the non-idealities and reliability failure mechanisms for RRAM devices, provides an overview on the most popular ones. In addition, it reports detailed anlysis of some of these based on data measurements. Finally, it presents two different mitigation schemes for RRAM based accelerators; one is based on RRAM non-ideality aware quantization and conductance control for neural network accuracy enhancement while the second is based on reliability-aware biased training technique.@en

Hardware security is currently a very influential domain, where each year countless works are published concerning attacks against hardware and countermeasures. A significant number of them use machine learning, which is proven to be very effective in other domains. This survey, as one of the early attempts, presents the usage of machine learning in hardware security in a full and organized manner. Our contributions include classification and introduction to the relevant fields of machine learning, a comprehensive and critical overview of machine learning usage in hardware security, and an investigation of the hardware attacks against machine learning (neural network) implementations.@en

Memristor-based computation-in-memory (CIM) can achieve high energy efficiency by processing the data within the memory, which makes it well-suited for applications like neural networks. However, memristors suffer from conductance variation problem where their programmed conductance values deviate from the desired values. Such variations lead to computational errors that result in degraded inference accuracy in CIM-based neural networks. In this paper, we present a mapping-aware biased training methodology to mitigate the impact of conductance variation on CIM-based neural networks. We first determine which conductance states of the memristor are inherently more immune to variation. The neural network is then trained under the constraint that important weights can only take numeric values which directly get mapped to such favorable states. Simulation results show that our proposed mapping-aware biased training achieves up to 2.4× hardware accuracy compared to the conventional training.

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Computation-in-memory (CIM) paradigm leverages emerging memory technologies such as resistive random access memories (RRAMs) to process the data within the memory itself. This alleviates the memory-processor bottleneck resulting in much higher hardware efficiency compared to von-Neumann architecture-based conventional hardware. Hence, CIM becomes an attractive alternative for applications like neural networks which require a huge number of data transfer operations in conventional hardware. CIM-based neural networks typically employ bit-slicing scheme which represents a single neural weight using multiple RRAM devices (called slices) to meet the high bit-precision demand. However, such neural networks suffer from significant accuracy degradation due to non-zero Gmin error where a zero weight in the neural network is represented by an RRAM device with a non-zero conductance. This paper proposes an unbalanced bit-slicing scheme to mitigate the impact of non-zero Gmin error. It achieves this by allocating appropriate sensing margins for different slices based on their binary positions. It also tunes the sensing margins to meet the demands of either high accuracy or energy-efficiency. The sensing margin allocation is supported by 2's complement arithmetic which further reduces the influence of non-zero Gmin error. Simulation results show that our proposed scheme achieves up to 7.3× accuracy and up to 7.8× correct operations per unit energy consumption compared to state-of-the-art.

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Next-generation personalized healthcare devices are undergoing extreme miniaturization in order to improve user acceptability. However, such developments make it difficult to incorporate cryptographic primitives using available target tech-nologies since these algorithms are notorious for their energy consumption. Besides, strengthening these schemes against side-channel attacks further adds to the device overheads. Therefore, viable alternatives among emerging technologies are being sought. In this work, we investigate the possibility of using memristors for implementing lightweight encryption. We propose a 40-nm RRAM-based GIFT-cipher implementation using a 1TIR configuration with promising results; it exhibits roughly half the energy consumption of a CMOS-only implementation. More importantly, its non-volatile and reconfigurable substitution boxes offer an energy-efficient protection mechanism against side-channel attacks. The complete cipher takes 0.0034 mm2of area, and encrypting a 128-bit block consumes a mere 242 pJ.@en

Timely detection of cardiac arrhythmia characterized by abnormal heartbeats can help in the early diagnosis and treatment of cardiovascular diseases. Wearable healthcare devices typically use neural networks to provide the most convenient way of continuously monitoring heart activity for arrhythmia detection. However, it is challenging to achieve high accuracy and energy efficiency in these smart wearable healthcare devices. In this work, we provide architecture-level solutions to deploy neural networks for cardiac arrhythmia classification. We have created a hierarchical structure after analyzing various neural network topologies where only required network components are activated to improve energy efficiency while maintaining high accuracy. In our proposed architecture, we introduce a severity-based classification approach to directly help the users of the wearable healthcare device as well as the medical professionals. Additionally, we have employed computation-in-memory based hardware to improve energy efficiency and area consumption by leveraging in-situ data processing and scalability of emerging memory technologies such as resistive random access memory (RRAM). Simulation experiments conducted using the MIT-BIH arrhythmia dataset show that the proposed architecture provides high accuracy while consuming average energy of 0.11 $\mu$J per heartbeat classification and 0.11 mm2 area, thereby achieving 25× improvement in average energy consumption and 12× improvement in area compared to the state-of-the-art.

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This paper addresses one of the directions of the HORIZON EU CONVOLVE project being dependability of smart edge processors based on computation-in-memory and emerging memristor devices such as RRAM. It discusses how how this alternative computing paradigm will change the way we used to do manufacturing test. In addition, it describes how these emerging devices inherently suffering from many non-idealities are calling for new solutions in order to ensure accurate and reliable edge computing. Moreover, the paper also covers the security aspects for future edge processors and shows the challenges and the future directions.@en

Advances in materials science and memory devices work in tandem for the evolution of Artificial Intelligence systems. Energy-efficient computation is the ultimate goal of emerging memristor technology, in which the storage and computation can be done in the same memory crossbar. In this work, an analog memristor device is fabricated utilizing the unique characteristics of single-wall carbon nanotubes (SWCNTs) to act as the switching medium of the device. Via the planar structure, the memristor device exhibits analog switching ability with high state stability. The device’s conductance and capacitance can be tuned simultaneously, increasing the device's potential and broadening its applications' horizons. The multi-state storage capability and long-term memory are the key factors that make the device a promising candidate for bio-inspired computing applications. As a demonstrator, the fabricated memristor is deployed in spiking neural networks (SNN) to exploit its analog switching feature for energy-efficient classification operation. Results reveal that the computation-in-memory implementation performs Vector Matrix Multiplication with 95% inference accuracy and few femtojoules per spike energy efficiency. The memristor device presented in this work opens new insights towards utilizing the outstanding features of SWCNTs for efficient analog computation in deep learning systems.

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Faster and cheaper computers have been constantly demanding technological and architectural improvements. However, current technology is suffering from three technology walls: leakage wall, reliability wall, and cost wall. Meanwhile, existing architecture performance is also saturating due to three well-known architecture walls: memory wall, power wall, and instruction-level parallelism (ILP) wall. Hence, a lot of novel technologies and architectures have been introduced and developed intensively. Our previous work has presented a comprehensive classification and broad overview of memory-centric computer architectures. In this article, we aim to discuss the most important classes of memory-centric architectures thoroughly and evaluate their advantages and disadvantages. Moreover, for each class, the article provides a comprehensive survey on memory-centric architectures available in the literature.@en

Spin-transfer torque magnetic random access memory (STT-MRAM) based computation-in-memory (CIM) architectures have shown great prospects for an energy-efficient computing. However, device variations and non-idealities narrow down the sensing margin that severely impacts the computing accuracy. In this work, we propose an adaptive referencing mechanism to improve the sensing margin of a CIM architecture for boolean binary logic (BBL) operations. We generate reference signals using multiple STT-MRAM devices and place them strategically into the array such that these signals can address the variations and trace the wire parasitics effectively. We have demonstrated this behavior using an STT-MRAM model, which is calibrated using 1Mbit characterized array. Results show that our proposed architecture for binary neural networks (BNN) achieves up to 17.8 TOPS/W on the MNIST dataset and 130× performance improvement for the text encryption compared to the software implementation on Intel Haswell processor.

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STT-MRAM has long been a promising non-volatile memory solution for the embedded application space owing to its attractive characteristics such as non-volatility, low leakage, high endurance, and scalability. However, the operating requirements for high-performance computing (HPC) and low power (LP) applications involve different challenges. This paper addresses different aspects of STT-MRAM; it will cover state-of-the-art, some new results and future challenges related to technology, design and test. While STT-MRAM devices have shown encouraging performance metrics at device-level, a key challenge has been achieving backend-of-line (BEOL) CMOS compatibility, while retaining the benefits of low power operation. Scaling demands to improve data densities have placed additional challenges in terms of addressing the impact of process-induced damage on device performance at CD < 100 nm. In addition, the paper discusses the design of reliable read mechanism considering the variability effects. Moreover, the failure of traditional fault modeling and test approaches in model STT-MRAM unique defects for appropriate test solutions is demonstrated in this paper based on silicon data.

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Emerging non-volatile resistive RAM (RRAM) device technology has shown great potential to cultivate not only high-density memory storage, but also energy-efficient computing units. However, the unique challenges related to RRAM fabrication process render the traditional memory testing solutions inefficient and inadequate for high product quality. This paper presents low-cost design-for-testability (DFT) solutions that augment the testing process and improve the fault coverage. A computation-in-memory (CIM) based DFT is realized to expedite the detection and diagnosis of faults by developing logic designs involving multi-row activation. A novel addressing scheme is introduced to facilitate the diagnosis of faults. Reconfigurable logic designs are developed to detect unique RRAM faults that offer features such as programmable reference generations, period, and voltage of operation. DFT implementations are validated on a post-layout extracted platform and testing sequences are introduced by incorporating the proposed DFTs. Results show that more than 2.3× speedup and better coverage are achieved with 6× area reduction when compared with state-of-the-art solutions.@en

Emerging non-volatile resistive memories like Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today’s research. They offer promising alternative computing architectures such as computation-in-memory (CiM) to reduce the transfer overhead between CPU and memory, usually referred to as the memory wall, which is present in all von Neumann architectures. A multitude of architectures with CiM capabilities are based on these devices, due to their inherent resistive behavior and thus their ability to perform calculation directly within the memory, and thus without invoking the CPU at all. However, emerging memories are sensitive to Process, Voltage and Temperature (PVT) variations. This sensitivity has an even larger impact on CiM architectures. In this paper, we analyze and compare the impact of PVT variations on STT-MRAM and RRAM-based CiM architectures. We perform a sensitivity analysis to identify which parts of the CiM structure are most susceptible to PVT variations, for each technology. Based on these analyses, we recommend that STT-MRAM is used in high-performance CiM, while RRAM is used for edge CiM.@en