Due to the harmonic motion of the cantilever in Tapping Mode Atomic Force Microscopy, it is seemingly impossible to estimate the tip-sample interactions from the motion of the cantilever. Not directly observing the interaction force, it is possible to damage the surface or the tip by applying an excessive mechanical load. The tip-sample interactions scale with the effective stiffness of the
probe. Thus, the reduction of the mechanical load is usually limited by the manufacturability of low stiffness probes. However, the one-to-one relationship between spring constant and applied force only holds when higher modes of the cantilever are not excited. In this paper, it is shown that, by passively tuning higher modes of the cantilever, it is possible to reduce the peak repulsive force.
These tuned probes can be dynamically more compliant than conventional probes with the same static spring constant. Both theoretical and experimental results show that a proper tuning of dynamic modes of cantilevers reduces the contact load and increases the sensitivity considerably.
Moreover, due to the contribution of higher modes, the tuned cantilevers provide more information on the tip-sample interaction. This extra information from the higher harmonics can be used for mapping and possibly identification of material properties of samples.@en

Optical near-field technologies such as solid immersion lenses and hyperlenses are candidate solutions for high resolution and high throughput wafer inspection and metrology for the next technology nodes. Besides sub-diffraction limited optical performance, these concepts share the necessity of extreme proximity to the sample at distances that are measured in tens of nanometers. For the instrument this poses two major challenges: 1) how to measure the distance to the sample? and 2) how to position accurately and at high speed? For the first challenge near-field thermal radiation is proposed as a mechanism for an integrated distance sensor (patent pending). This sensor is realized by making a sensitive calorimeter (accuracy of 2:31nW root sum squared). When used for distance measurement an equivalent uncertainty of 1nm can be achieved for distances smaller than 100 nm. By scanning the distance sensor over the sample, thermal profilometry is realized, which can be used to inspect surfaces in a non-intrusive and non-contact way. This reduces wear of the probe and minimizes the likelihood of damaging the sample.@en

We have developed a high speed, miniature scanning probe microscope (MSPM) integrated with a Positioning Unit (PU) for accurately positioning the MSPM on a large substrate. This combination enables simultaneous, parallel operation of many units on a large sample for high throughput measurements. The size of the MSPM is 19 × 45 × 70 mm3 . It contains a one-dimensional flexure stage with counter-balanced actuation for vertical scanning with a bandwidth of 50 kHz and a z-travel range of more than 2 µm. This stage is mechanically decoupled from the rest of the MSPM by suspending it on specific dynamically determined points. The motion of the probe, which is mounted on top of the flexure stage is measured by a very compact optical beam deflection (OBD). Thermal noise spectrum measurements of short cantilevers show a bandwidth of 2 MHz and a noise of less than 15 fm/Hz1/2 . A fast approach and engagement of the probe to the substrate surface have been achieved by integrating a small stepper actuator and direct monitoring of the cantilever response to the approaching surface. The PU has the same width as the MSPM, 45 mm and can position the MSPM to a pre-chosen position within an area of 275×30 mm2 to within 100 nm accuracy within a few seconds. During scanning, the MSPM is detached from the PU which is essential to eliminate mechanical vibration and drift from the relatively low-resonance frequency and low-stiffness structure of the PU. Although the specific implementation of the MSPM we describe here has been developed as an atomic force microscope, the general architecture is applicable to any form of SPM. This high speed MSPM is now being used in a parallel SPM architecture for inspection and metrology of large samples such as semiconductor wafers and masks.@en

The maximum amount of repulsive force applied to the surface plays a very important role in damage of tip or sample in Atomic Force Microscopy(AFM). So far, many investigations have focused on peak repulsive forces in tapping mode AFM in steady state conditions. However, it is known that AFM could be more damaging in transient conditions. In high-speed scanning, and in presence of 3D nano structures (such as FinFET), the changes in topography appear in time intervals shorter than the response time of the cantilever. In this case, the tip may crush into the sample by exerting much higher forces than for the same cantilever-sample distance in steady state situations. In this study the effects of steep upward steps in topography on the tip-sample interactions have been investigated, and it has been found that the order(s) of magnitude higher forces can be applied. The information on the worst case scenario obtained by this method can be used for selection of operation parameters and probe design to minimize damage in high-speed imaging. The numerically obtained results have been verified with the previous works in steady state regime. Based on this investigation the maximum safe scanning speed has been obtained for a case study@en

One of the major limitations in the speed of the atomic force microscope (AFM) is the bandwidth of the mechanical scanning stage, especially in the vertical (z) direction. According to the design principles of “light and stiff” and “static determinacy,” the bandwidth of the mechanical scanner is limited by the first eigenfrequency of the AFM head in case of tip scanning and by the sample stage
in terms of sample scanning. Due to stringent requirements of the system, simply pushing the first eigenfrequency to an ever higher value has reached its limitation. We have developed a miniaturized, high speed AFM scanner in which the dynamics of the z-scanning stage are made insensitive to its surrounding dynamics via suspension of it on specific dynamically determined points. This
resulted in a mechanical bandwidth as high as that of the z-actuator (50 kHz) while remaining insensitive to the dynamics of its base and surroundings. The scanner allows a practical z scan range of 2.1 µm. We have demonstrated the applicability of the scanner to the high speed scanning of nanostructures.@en