In the past decade, lithium niobate (LiNbO₃ or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities, and low-loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide-semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here, we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition at low temperatures (<165 °C), can be conveniently integrated with LiNbO₃ and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO₃ intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 1.06 × 10⁵ and a resonance electro-optic tunability of 3.4 pm/V with a 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with a 40 μm radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for the implementation of future fast electro-optic modulators and reconfigurable photonic circuits, as well as nonlinear processes that can benefit from involving both second- and third-order nonlinearities.

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Integrated photonic circuits have transformed data communication, biosensing, and light detection and ranging and hold wide-ranging potential for optical computing, optical imaging, and signal processing. These applications often require tunable and reconfigurable photonic components, most commonly accomplished through the thermo-optic effect. However, the resulting tuning window is limited for standard optical materials, such as silicon dioxide and silicon nitride. Most importantly, bidirectional thermal tuning on a single platform has not been realized. For the first time, we show that by tuning and optimizing the deposition conditions in inductively coupled plasma chemical vapor deposition (ICPCVD) of silicon dioxide, this material can be used to deterministically tune the thermo-optic properties of optical devices without introducing significant losses. We demonstrate that we can deterministically integrate positive and negative wavelength shifts on a single chip, validated on amorphous silicon carbide (a-SiC), silicon nitride (SiN), and silicon-on-insulator (SOI) platforms. This enables the fabrication of a novel tunable coupled ring optical waveguide (CROW) requiring only a single heater. In addition, we observe up to a 10-fold improvement of the thermo-optic tunability and demonstrate athermal ring resonators with shifts as low as 1.5 pm/°C. The low-temperature deposition of our silicon dioxide cladding can be combined with lift-off to isolate the optical devices, resulting in a decrease in thermal crosstalk by at least 2 orders of magnitude. Our method paves the way for novel photonic architectures incorporating bidirectional thermo-optic tunability.@en

Inspection of surface and nanostructure imperfections play an important role in high-throughput manufacturing across various industries. This paper introduces a novel, parallelised version of the metrology and inspection technique: Coherent Fourier scatterometry (CFS). The proposed strategy employs parallelisation with multiple probes, facilitated by a diffraction grating generating multiple optical beams and detection using an array of split detectors. The article details the optical setup, design considerations, and presents results, including independent detection verification, calibration curves for different beams, and a data stitching process for composite scans. The study concludes with discussions on the system's limitations and potential avenues for future development, emphasizing the significance of enhancing scanning speed for the widespread adoption of CFS as a commercial metrology tool.@en

Achieving high degree of tunability in photonic devices has been a focal point in the field of integrated photonics for several decades, enabling a wide range of applications from telecommunication and biochemical sensing to fundamental quantum photonic experiments. We introduce a novel technique to engineer the thermal response of photonic devices resulting in large and deterministic wavelength shifts across various photonic platforms, such as amorphous Silicon Carbide (a-SiC), Silicon Nitride (SiN) and Silicon-On-Insulator (SOI). In this paper, we demonstrate bi-directional thermal tuning of photonic devices fabricated on a single chip. Our method can be used to design high-sensitivity photonic temperature sensors, low-power Mach-Zehnder interferometers and more complex photonics circuits.

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In this work, we fabricate and characterize ring resonators on ICPCVD-deposited a-SiC films at a low temperature of 150°C, demonstrating exceptional intrinsic quality factors and low waveguide propagation losses, thus highlighting the potential for a-SiC as a valuable platform for future hybrid photonic technologies.@en

Detecting defects on diffraction gratings is crucial for ensuring their performance and reliability. Practical detection of these defects poses challenges due to their subtle nature.We performnumerical investigations and demonstrate experimentally the capability of coherent Fourier scatterometry (CFS) to detect particles as small as 100 nm and also other irregularities that are encountered usually on diffraction gratings.Our findings indicate that CFS is a viable tool for inspection of diffraction gratings.

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Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Q_int = (4.7-5.7) × 10⁵ corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO₃ platforms.

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