Recent efforts in quantum photonics emphasize on-chip generation, manipulation, and detection of single photons for quantum computing and quantum communication. In quantum photonic chips, single photons are often generated using parametric down-conversion and quantum dots. Quantum dots are particularly attractive due to their on-demand generation of high-purity single photons. Different photonic platforms are used to manipulate the states of the photons. Nevertheless, no single platform satisfies all the requirements of quantum photonics, as each platform has its merits and shortcomings. For example, the thin-film silicon nitride (SiN) platform provides ultra-low loss on the order of 0.1 dB m−1, but is incompatible with dense integration , requiring large bending radii. On the other hand, silicon on insulator offers a high refractive index contrast for dense integration but has a high absorption coefficient at the emission wavelengths (800–970 nm) of state-of-the-art QDs. Amorphous silicon carbide (a-SiC) has emerged as an alternative with a high refractive index (higher than SiN), an extended transparency window compared to Silicon, and a thermo-optic coefficient three times higher than that of SiN, which is crucial for tuning photonic devices on a chip. With the vision of realizing a quantum photonic integrated circuit, we explore the hybrid integration of SiN/a-SiC photonic platform with quantum dots and superconducting nanowire single-photon detectors. We validate our hybrid platform using a brief literature study, proof-of-principle experiments, and complementary simulations. As a proof-of-principle, we show a quantum dot embedded in nanowires (for deterministic micro-transfer and better integration) that emits single photons at 885 nm with a purity of 0.011 and a lifetime of 0.98 ns. Furthermore, we design and simulate an adiabatic coupler between two photonic platforms, a-SiC and SiN, by aiming to use the benefits of both platforms, i.e. dense integration and low losses, respectively. Our design couples the light from SiN waveguide to a-SiC waveguide with 96% efficiency at 885 nm wavelength. Our hybrid platform can be used to demonstrate on-chip quantum experiments such as Hong–Ou–Mandel, where we can design a large optical delay line in SiN and an interference circuit in a-SiC.@en

We present the first observations of laser synchronised relaxation oscillations in superconducting nanowire single photon detectors. Understanding the thermal feedback behind these oscillations aids the development of photon number resolving and higher count rate detectors.

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In most optical waveguides employed within photonic integrated circuits, light confinement is achieved by etching the high-index layer. However, these waveguides often lack versatility in optimizing optical properties, such as mode size, shape, dispersion, and polarization. Moreover, they frequently suffer from high coupling losses and their propagation losses are significantly influenced by the quality of the etching process, especially for materials with high mechanical rigidity. Here, we present a hybrid optical waveguide concept that effectively addresses these limitations by combining a strip of easily processible low-index material (SU8) with a high-index hard-to-etch guiding layer (amorphous silicon carbide, SiC). Our approach not only eliminates the need for SiC etching but also offers flexibility in waveguide design to accommodate advanced functionalities. One of the key advancements of this hybrid configuration is its ability to suppress the transverse magnetic mode by 62 dB at 1550 nm, effectively functioning as a transverse electric pass waveguide. This simplifies the measurements by eliminating the need for polarization controllers and polarizers. Furthermore, through tailored waveguides, we achieve 2.5 times higher coupling efficiency compared to untapered hybrid SiC waveguides. We also demonstrate that thermal baking of the polymer layer reduces the scattering losses from 1.57 to 1.3 dB/cm. In essence, our hybrid approach offers a versatile way of realizing low-loss SiC-based integrated optical components with advanced features, such as excellent polarization suppression, flexible mode shapes, and dispersion control, compared to etched counterparts.@en

Since their first demonstration in 2001 [Gol’tsman et al., Appl. Phys. Lett. 79, 705-707 (2001)], superconducting-nanowire single-photon detectors (SNSPDs) have witnessed two decades of great developments. SNSPDs are the detector of choice in most modern quantum optics experiments and are slowly finding their way into other photon-starved fields of optics. Until now, however, in nearly all experiments, SNSPDs were used as “binary” detectors, meaning that they could only distinguish between 0 and > = 1 photons, and photon number information was lost. Recent research has demonstrated proof-of-principle photon-number resolution (PNR) SNSPDs counting 2-5 photons. The photon-number-resolving capability is highly demanded in various quantum-optics experiments, including Hong-Ou-Mandel interference, photonic quantum computing, quantum communication, and non-Gaussian quantum state preparation. In particular, PNR detectors at the wavelength range of 850-950 nm are of great interest due to the availability of high-quality semiconductor quantum dots (QDs) [Heindel et al., Adv. Opt. Photonics 15, 613-738 (2023)] and high-performance cesium-based quantum memories [Ma et al., J. Opt. 19, 043001 (2017)]. In this paper, we demonstrate NbTiN-based SNSPDs with >94% system detection efficiency, sub-11 ps timing jitter for one photon, and sub-7 ps for 2 photons. More importantly, our detectors resolve up to 7 photons using conventional cryogenic electric readout circuitry. Through theoretical analysis, we show that the PNR performance of demonstrated detectors can be further improved by enhancing the signal-to-noise ratio and bandwidth of our readout circuitry. Our results are promising for the future of optical quantum computing and quantum communication.

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Measuring superconducting materials near absolute zero Kelvin poses challenges due to low output voltage. This study presents a cryogenic amplifier for ultra-low temperatures, fabricable on the same chip as the material, replacing noisy room temperature setups.

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Photonic integrated circuits (PICs) are enabling breakthroughs in several areas, including quantum computing, neuromorphic processors, wearable devices, and more. Nevertheless, existing PIC measurement methods lack the spectral precision, speed, and sensitivity required for refining current applications and exploring new frontiers such as point-of-care or wearable biosensors. Here, the “sweeping optical frequency mixing method (SOHO)” is presented, surpassing traditional PIC measurement methods with real-time operation, 30 dB higher sensitivity, and over 100 times better spectral resolution. Leveraging the frequency mixing process with a sweeping laser, SOHO excels in simplicity, eliminating the need for advanced optical components and additional calibration procedures. Its superior performance is demonstrated on ultrahigh-quality factor (Q) fiber-loop resonators (Q = 46 × 10⁶), as well as microresonators, realized on a new optical waveguide platform. An experimental spectral resolution of 19.1 femtometers is demonstrated using an 85-meter-long unbalanced fiber Mach Zehnder Interferometer, constrained by noise resulting from the extended fiber length, while the theoretical resolution is calculated to be 6.2 femtometers, limited by the linewidth of the reference laser. With its excellent performance metrics, SOHO has the potential to become a vital measurement tool in photonics, excelling in high-speed and high-resolution measurements of weak optical signals.

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Achieving high degree of tunability in photonic devices has been a focal point in the field of integrated photonics for several decades, enabling a wide range of applications from telecommunication and biochemical sensing to fundamental quantum photonic experiments. We introduce a novel technique to engineer the thermal response of photonic devices resulting in large and deterministic wavelength shifts across various photonic platforms, such as amorphous Silicon Carbide (a-SiC), Silicon Nitride (SiN) and Silicon-On-Insulator (SOI). In this paper, we demonstrate bi-directional thermal tuning of photonic devices fabricated on a single chip. Our method can be used to design high-sensitivity photonic temperature sensors, low-power Mach-Zehnder interferometers and more complex photonics circuits.

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Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Q_int = (4.7-5.7) × 10⁵ corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO₃ platforms.

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At the core of quantum photonic information processing and sensing, two major building pillars are single-photon emitters and single-photon detectors. In this review, we systematically summarize the working theory, material platform, fabrication process, and game-changing applications enabled by state-of-the-art quantum dots in nanowire emitters and superconducting nanowire single-photon detectors. Such nanowire-based quantum hardware offers promising properties for modern quantum optics experiments. We highlight several burgeoning quantum photonics applications using nanowires and discuss development trends of integrated quantum photonics. Also, we propose quantum information processing and sensing experiments for the quantum optics community, and future interdisciplinary applications.

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Using short-wave infrared wavelength advantages, we demonstrate one-photon fluorescence confocal microscopy of adult mouse brains with penetration depths up to 1.7mm. This is achieved by labeling quantum dots with 1300 nm excitation and 1700 nm emission and detecting them with a single-photon superconducting nanowire detector.

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Light scattering by biological tissues sets a limit to the penetration depth of high-resolution optical microscopy imaging of live mammals in vivo. An effective approach to reduce light scattering and increase imaging depth is to extend the excitation and emission wavelengths to the second near-infrared window (NIR-II) at >1,000 nm, also called the short-wavelength infrared window. Here we show biocompatible core–shell lead sulfide/cadmium sulfide quantum dots emitting at ~1,880 nm and superconducting nanowire single-photon detectors for single-photon detection up to 2,000 nm, enabling a one-photon excitation fluorescence imaging window in the 1,700–2,000 nm (NIR-IIc) range with 1,650 nm excitation—the longest one-photon excitation and emission for in vivo mouse imaging so far. Confocal fluorescence imaging in NIR-IIc reached an imaging depth of ~1,100 μm through an intact mouse head, and enabled non-invasive cellular-resolution imaging in the inguinal lymph nodes of mice without any surgery. We achieve in vivo molecular imaging of high endothelial venules with diameters as small as ~6.6 μm, as well as CD169 + macrophages and CD3 + T cells in the lymph nodes, opening the possibility of non-invasive intravital imaging of immune trafficking in lymph nodes at the single-cell/vessel-level longitudinally.

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Ultra-high system detection efficiency (SDE) s uperconducting nanowire single-photon detectors are demonstrated for a broad range of wavelengths, from UV to mid-infrared, opening novel possibilities in the fields of quantum photonics, neuroimaging and astronomy.

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Shortly after their inception, superconducting nanowire single-photon detectors (SNSPDs) became the leading quantum light detection technology. With the capability of detecting single-photons with near-unity efficiency, high time resolution, low dark count rate, and fast recovery time, SNSPDs outperform conventional single-photon detection techniques. However, detecting lower energy single photons (<0.8 eV) with high efficiency and low timing jitter has remained a challenge. To achieve unity internal efficiency at mid-infrared wavelengths, previous works used amorphous superconducting materials with low energy gaps at the expense of reduced time resolution (close to a nanosecond), and by operating them in complex milliKelvin (mK) dilution refrigerators. In this work, we provide an alternative approach with SNSPDs fabricated from 5 to 9.5 nm thick NbTiN superconducting films and devices operated in conventional Gifford-McMahon cryocoolers. By optimizing the superconducting film deposition process, film thickness, and nanowire design, our fiber-coupled devices achieved >70% system detection efficiency (SDE) at 2 μm and sub-15 ps timing jitter. Furthermore, detectors from the same batch demonstrated unity internal detection efficiency at 3 μm and 80% internal efficiency at 4 μm, paving the road for an efficient mid-infrared single-photon detection technology with unparalleled time resolution and without mK cooling requirements. We also systematically studied the dark count rates (DCRs) of our detectors coupled to different types of mid-infrared optical fibers and blackbody radiation filters. This offers insight into the trade-off between bandwidth and DCRs for mid-infrared SNSPDs. To conclude, this paper significantly extends the working wavelength range for SNSPDs made from polycrystalline NbTiN to 1.5-4 μm, and we expect quantum optics experiments and applications in the mid-infrared range to benefit from this far-reaching technology.

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Optical microscopy is a valuable tool for in vivo monitoring of biological structures and functions because of its noninvasiveness. However, imaging deep into biological tissues is challenging due to the scattering and absorption of light. Previous research has shown that the two optimal wavelength windows for high-resolution deep mouse brain imaging are around 1300 and 1700 nm. However, one-photon fluorescence imaging in the wavelength region has been highly challenging due to the poor detection efficiency of currently available detectors. To fully utilize this wavelength advantage, we demonstrated here one-photon confocal fluorescence imaging of deep mouse brains with an excitation wavelength of 1310 nm and an emission wavelength within the 1700 nm window. Fluorescence emission at 1700 nm was detected by a custom-built superconducting nanowire single-photon detector (SNSPD) optimized for detection between 1600 nm and 2000 nm with low detection noise and high detection efficiency. With the PEGylated quantum dots and SNSPD both positioned at the optimal imaging window for deep tissue penetration, we demonstrated in vivo one-photon confocal fluorescence imaging at approximately 1.7 mm below the surface of the mouse brain, through the entire cortical column and into the hippocampus region with a low-cost continuous-wave laser source and low excitation power. We further discussed the significance of the staining inhomogeneity in determining the depth limit of one-photon confocal fluorescence imaging. Our work may motivate the further development of long wavelength fluorescent probes, and inspire innovations in high-efficiency, high-gain, and low-noise long wavelength detectors for biological imaging.

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Two decades after their demonstration, superconducting nanowire single-photon detectors (SNSPDs) have become indispensable tools for quantum photonics as well as for many other photon-starved applications. This invention has not only led to a burgeoning academic field with a wide range of applications but also triggered industrial efforts. Current state-of-the-art SNSPDs combine near-unity detection efficiency over a wide spectral range, low dark counts, short dead times, and picosecond time resolution. The present perspective discusses important milestones and progress of SNSPDs research, emerging applications, and future challenges and gives an outlook on technological developments required to bring SNSPDs to the next level: a photon-counting, fast time-tagging imaging, and multi-pixel technology that is also compatible with quantum photonic integrated circuits.

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Coherent Fourier scatterometry (CFS) has been introduced to fulfil the need for noninvasive and sensitive inspection of subwavelength nanoparticles in the far field. The technique is based on detecting the scattering of coherent light when it is focused on isolated nanoparticles. In the present work, we describe the results of an experimental study aimed at establishing the actual detection limits of the technique, namely the smallest particle that could be detected with our system. The assessment for particles with a diameter smaller than 40 nm is carried out using calibrated nano-pillars of photoresist on silicon wafers that have been fabricated with e-beam lithography. We demonstrate the detection of polystyrene equivalent nanoparticles of diameter of 21 nm with a signal-to-noise ratio of 4 dB using the illuminating wavelength of 405 nm.

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Hybrid integration provides an important avenue for incorporating atom-like solid-state single-photon emitters into photonic platforms that possess no optically-active transitions. Hexagonal boron nitride (hBN) is particularly interesting quantum emitter for hybrid integration, as it provides a route for room-temperature quantum photonic technologies, coupled with its robustness and straightforward activation. Despite the recent progress of integrating hBN emitters in photonic waveguides, a deterministic, site-controlled process remains elusive. Here, the integration of selected hBN emitter in silicon nitride waveguide is demonstrated. A small misalignment angle of 4° is shown between the emission-dipole orientation and the waveguide propagation direction. The integrated emitter maintains high single-photon purity despite subsequent encapsulation and nanofabrication steps, delivering quantum light with zero delay second order correlation function (Formula presented.). The results provide an important step toward deterministic, large scale, quantum photonic circuits at room temperature using atom-like single-photon emitters.

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Single photon detectors are indispensable tools in optics, from fundamental measurements to quantum information processing. The ability of superconducting nanowire single photon detectors (SNSPDs) to detect single photons with unprecedented efficiency, short dead time, and high time resolution over a large frequency range enabled major advances in quantum optics. However, combining near-unity system detection efficiency (SDE) with high timing performance remains an outstanding challenge. In this work, we fabricated novel SNSPDs on membranes with 99.5-2.07+0.5% SDE at 1350 nm with 32 ps timing jitter (using a room-temperature amplifier), and other detectors in the same batch showed 94%-98% SDE at 1260-1625 nm with 15-26 ps timing jitter (using cryogenic amplifiers). The SiO2/Au membrane enables broadband absorption in small SNSPDs, offering high detection efficiency in combination with high timing performance. With low-noise cryogenic amplifiers operated in the same cryostat, our efficient detectors reach a timing jitter in the range of 15-26 ps. We discuss the prime challenges in optical design, device fabrication, and accurate and reliable detection efficiency measurements to achieve high performance single photon detection. As a result, the fast developing fields of quantum information science, quantum metrology, infrared imaging, and quantum networks will greatly benefit from this far-reaching quantum detection technology.

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We characterized the performance of abiased superconducting nanowire to detect X-ray photons. The device, made of a 10 nm thin NbTiN film and fabricated on a dielectric substrate (SiO2, Nb3O5) detected 1000 times larger signal than anticipated from direct X-ray absorption. We attributed this effect to X-ray induced generation of secondary particles in the substrate. The enhancement corresponds to an increase in the flux by the factor of 3.6, relative to a state-of-the-art commercial X-ray silicon drift detector. The detector exhibited 8.25 ns temporal recovery time and 82 ps timing resolution, measured using optical photons. Our results emphasize the importance of the substrate in superconducting X-ray single photon detectors.

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