Detection and control of Andreev bound states (ABSs) localized at semiconductor-superconductor interfaces are essential for their use in quantum applications. Here we investigate the impact of ABSs on the supercurrent through a Josephson junction containing a quantum dot (QD). Additional normal-metal tunneling probes on both sides of the junction unveil the ABSs residing at the semiconductor-superconductor interfaces. Such knowledge provides an ingredient missing in previous studies, improving the connection between theory and experimental data. By varying the ABS energies using electrostatic gates, we show control of the switching current, with the ability to alter it by more than an order of magnitude. Finally, the large degree of ABS tunability allows us to realize a three-site Andreev molecule in which the central QD is screened by both ABSs. This system is studied simultaneously using both supercurrent and spectroscopy.@en

Correction to: Nature Nanotechnologyhttps://doi.org/10.1038/s41565-017-0032-8, published online 15 January 2018. The Letter reports Majorana signatures in hybrid InSb semiconductor nanowire–NbTiN superconductor devices. The devices exhibit a conductance plateau near the conductance quantum 2e²/h at bias voltages above the superconducting gap (normal conductance), accompanied by an enhanced Andreev conductance at bias voltages below the superconducting gap (subgap conductance). We have attributed these experimental observations to ballistic transport as supported by a theoretical analysis¹, finding mean free paths on the order of or larger than the effective wire segment (the segment covered by the superconducting electrode). Here, we correct errors discovered on reanalysis of the original data², following concerns raised by readers. Due to the age of the paper, it cannot be corrected directly in the original publication, thus the updates are provided via this amendment. We provide additional discussion on the claim of ballistic transport so as to avoid misinterpretations. External peer review of the reanalysis concluded that the claims in the Letter remain. An extended public repository including data obtained from nanowire devices that were not included in the publication can be found in ref. ². We note the lack of a series of flat and precisely quantized conductance plateaus (a staircase), a clear ballistic transport characteristic (see the two newly included Supplementary Figs. 1 and 7 showing larger voltage ranges of Fig. 1 and the original Supplementary Fig. 5). Our earlier studies on ballistic transport in nanowire devices^3,4 indicate that vapour–liquid–solid nanowires do not have the proper geometry for observing a conductance staircase without the application of a magnetic field perpendicular to the wire axis, which requires ideal (Landauer) reservoirs interfacing the ballistic region, absorbing charge carriers with near-unit probability. Similar to our earlier studies, ohmic contacts in the present nanowire devices do not satisfy the conditions of Landauer reservoirs. However, the transport in the effective wire segment can nevertheless be ballistic whose characteristic is a plateau feature near 2e²/h in normal conductance together with an enhanced Andreev conductance. Importantly, precise quantization is not realistic, prevented by the two-terminal device geometry, inevitably decreasing the conductance. In summary, a plateau feature with an enhanced Andreev conductance together with our theoretical analyses indicate that a large fraction of transport is ballistic over distances of the order of our device length. We add a discussion to the main text of the Letter as follows: “… followed by a dip in conductance due to channel mixing²⁰ [ref. ¹ below]. We do not observe higher plateaus (Supplementary Figs. 1 and 7), which we attribute to the contacts not satisfying the conditions of Landauer reservoirs, resulting in residual scattering more effective at larger conductance. This is in line with our earlier studies^25,39 [refs. ^4,5 below] which indicated that vapour–liquid–solid nanowires do not have the proper geometry for observing a conductance staircase without the application of a perpendicular magnetic field. From the absence of quantum dots, the observed induced gap …”. The following text should also have been included in the abstract: “… exhibiting clear ballistic transport properties manifested by a conductance plateau with an Andreev enhancement, albeit lacking a quantized conductance staircase hindered by the device geometry.” The conductance values reported in the publication are ~8% lower (near 2e²/h) than the actual value (corrected Fig. 1). This deviation is due to a drop in the gain of the current-to-voltage amplifier at an ac excitation frequency of 67 Hz⁵. As a result, there is a slight change in the Andreev conductance enhancement factor and the superconducting contact transparency extracted from the enhancement (a comparison between the values quoted in the publication and the corrected ones is given below in B). The general conclusions do not rely on the exact value of the conductance as precise quantization is not expected due to the two-terminal device geometry. The subtracted series resistance of 3 kΩ in the original Fig. 1 was an overestimation (see corrected Fig. 1 in the Supplementary Data file). The subtraction of 3 kΩ was not mentioned in the original publication. A comparison of the original and corrected Fig. 1 is presented in a Supplementary Data file accompanying this correction. For all the figures in the original publication except Fig. 1, we either subtracted a contact resistance value of 0.5 kΩ, which is an underestimation¹, or no resistance at all. We note that in tunneling measurements the overall resistance is significantly higher than the normal metal contact resistance whose contribution can therefore be neglected. Figure 1, however, was used to estimate the superconducting contact transparency and Andreev enhancement in the high conductance regime, requiring a realistic exclusion of the contact resistance. Following our previous paper⁴, which found normal metal contact resistance values between 1.5–3.25 kΩ per contact and was based on fitting the measured conductance using theory (single mode interfacing a superconductor), which provided reasonable agreement after excluding 3 kΩ, we subtracted 3 kΩ to exclude the resistance of the normal metal contact. During our reanalysis, we have discovered that the minimum resistance of this device at the largest applied gate voltages is 2.9 kΩ, a value providing an upper bound on the contact resistance. Here, 2.9 kΩ would be the contact resistance under the assumption that the nanowire itself has zero resistance at largest gate voltages. The contact resistance can be estimated with an alternative method by subtracting a series resistance to match the observed conductance plateau at bias voltages above the superconducting gap to the expected quantized value, a procedure not done in the original publication. By taking the conductance averaged at positive and negative |V| ~ 1.7 mV (around the largest bias voltages available for this analysis) we find that the quantized value is reached for a contact resistance of 0.77 kΩ. (Considering only the positive bias and separately only the negative bias results in a range of 0–2.13 kΩ for the contact resistance.) In our corrected estimate of the contact resistance, we have applied the calibration procedure⁵ that corrects for ac circuit effects, uses calibrated values for the series resistance of the setup where Fig. 1 was measured and directly corrects the error listed in A above. Upon reanalysis we estimate the following contact resistance values, enhancement factors and transparencies: (Table presented.) Contact resistance Enhancement factor Transparency Lower bound 0 kΩ 1.26 0.88 Conservative estimation¹ (used in corrected Fig. 1) 0.5 kΩ 1.32 0.90 Current best estimate 0.77 kΩ 1.36 0.90 Original estimate in paper 3 kΩ >1.5 >0.93 The corrected superconducting contact transparency value of 0.9 does not affect the claim of high transparency. The claim of ballistic transport does not rest on the exact value of the conductance plateau and hence is also unaffected. The original Methods section omits the indication of subtracted series resistances which account for the normal metal contact resistance in each figure. The following is included here for the corrected Methods: The original Methods section omits the indication of subtracted series resistances which account for the normal metal contact resistance in each figure. The following is included here for the corrected Methods: “Contact resistance treatment. A fixed-value series resistance of 0.5 kΩ has been subtracted in Figs. 1 and 4, Supplementary Figs. 1, 2b,c and 4–9 to account for the contact resistance of the normal metal lead. This value is smaller than the lowest contact resistance we have obtained for InSb nanowire devices²⁵ (ref. ⁴ below), which makes the interface transparency estimated from Fig. 1 a lower bound. For the remaining figures, no series resistance has been subtracted to account for the normal metal contact resistance.” In the original Supplementary Fig. 5 (now Supplementary Fig. 6), a charge jump was corrected by removal of 12 line traces (corresponding to +0.15 V to +0.04 V in gate voltage in the measured data) and offset of the gate voltage axis by 0.12 V after the charge jump (–1 V to +0.03 V) to maintain continuity of the axis. This processing was not mentioned in the original publication. The corrected Supplementary Fig. 6 excludes this processing and represents the data as measured. In the original Supplementary Fig. 5 (now Supplementary Fig. 6), a charge jump was corrected by removal of 12 line traces (corresponding to +0.15 V to +0.04 V in gate voltage in the measured data) and offset of the gate voltage axis by 0.12 V after the charge jump (–1 V to +0.03 V) to maintain continuity of the axis. This processing was not mentioned in the original publication. The corrected Supplementary Fig. 6 excludes this processing and represents the data as measured. A comparison of the original and corrected Fig. SI5 (now Fig. SI6) is presented in a Supplementary Data file accompanying this correction. Original Supplementary Fig. 1f (now Supplementary Fig. 2f): The offset mentioned in the caption is erroneously given as 0.006 × 2e²/h but is 0.01 × 2e²/h. Original Supplementary Fig. 4a,b (now Supplementary Fig. 5a,b) were indicated to present data from Fig. 2a (or original Supplementary Fig. 1a). This is incorrect. The data used are from the original Supplementary Fig. 1b (now Supplementary Fig. 2b) which has the same measurement settings as in Fig. 2a except the barrier gate is –1.5 V (the barrier gate is –1.4 V in Fig. 2a or original Supplementary Fig. 1a). In the original panels c–e of Supplementary Fig. 7 (now Supplementary Fig. 9c–e) the bias polarity is mistakenly inverted.

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Superconducting diodes are recently-discovered quantum analogues of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a superconductor can become dependent on the direction of the applied current. The combination of these ingredients naturally occurs in proximitized semiconductors under a magnetic field, which is also predicted to give rise to exotic physics such as topological superconductivity. In this work, we use InSb nanowires proximitized by Al to investigate the superconducting diode effect. Through shadow-wall lithography, we create short Josephson junctions with gate control of both the proximitized weak link as well as the proximitized leads. When the magnetic field is applied perpendicular to the nanowire axis, the superconducting diode effect depends on the out-of-plane angle. In particular, it is strongest along a specific angle, which we interpret as the direction of the spin-orbit field in the proximitized leads. Moreover, the electrostatic gates can be used to drastically alter this effect and even completely suppress it. Finally, we also observe a significant gate-tunable diode effect when the magnetic field is applied parallel to the nanowire axis. Due to the considerable degree of control via electrostatic gating, the semiconductor-superconductor hybrid Josephson diode emerges as a promising element for innovative superconducting circuits and computation devices.

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Kitaev chains in quantum dot-superconductor arrays are a promising platform for the realization of topological superconductivity. As recently demonstrated, even a two-site chain can host Majorana zero modes known as “poor man’s Majorana”. Harnessing the potential of these states for quantum information processing, however, requires increasing their robustness to external perturbations. Here, we form a two-site Kitaev chain using Yu-Shiba-Rusinov states in proximitized quantum dots. By deterministically tuning the hybridization between the quantum dots and the superconductor, we observe poor man’s Majorana states with a gap larger than 70 μeV. The sensitivity to charge fluctuations is also greatly reduced compared to Kitaev chains made with non-proximitized dots. The systematic control and improved energy scales of poor man’s Majorana states realized with Yu-Shiba-Rusinov states will benefit the realization of longer Kitaev chains, parity qubits, and the demonstration of non-Abelian physics.@en

A personal perspective is given on a decade of research on Majorana bound states (MBS) in hybrid devices of semiconducting nanowires covered with a superconductor. Predicted experimental signatures like zero-bias anomalies turned out to be false positive evidence for topological MBS. Zero-bias conductance peaks have found alternative explanations in terms of material disorder and smooth boundary potentials. A recount is given on various predictions, observations and re-interpretations, as well as the lessons learned in retrospect and an outlook on the future.@en

We study the current-phase relation (CPR) of an InSb-Al nanowire Josephson junction in parallel magnetic fields up to 700 mT. At high magnetic fields and in narrow voltage intervals of a gate under the junction, the CPR exhibits π shifts. The supercurrent declines within these gate intervals and shows asymmetric gate voltage dependence above and below them. We detect these features sometimes also at zero magnetic field. The observed CPR properties are reproduced by a theoretical model of supercurrent transport via interference between direct transmission and a resonant localized state.

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Andreev spin qubits have recently emerged as an alternative qubit platform with realizations in semiconductor–superconductor hybrid nanowires. In these qubits, the spin degree of freedom of a quasiparticle trapped in a Josephson junction is intrinsically spin–orbit coupled to the supercurrent across the junction. This interaction has previously been used to perform spin readout, but it has also been predicted to facilitate inductive multi-qubit coupling. Here we demonstrate a strong supercurrent-mediated longitudinal coupling between two distant Andreev spin qubits. We show that it is both gate- and flux-tunable into the strong coupling regime and, furthermore, that magnetic flux can be used to switch off the coupling in situ. Our results demonstrate that integrating microscopic spin states into a superconducting qubit architecture can combine the advantages of both semiconductors and superconducting circuits and pave the way to fast two-qubit gates between distant spins.

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Andreev bound states are fermionic states localized in weak links between superconductors which can be occupied with spinful quasiparticles. Microwave experiments using superconducting circuits with InAs/Al nanowire Josephson junctions have recently enabled probing and coherent manipulation of Andreev states but have remained limited to zero or small magnetic fields. Here, we use a flux-tunable superconducting circuit compatible in magnetic fields up to 1T to perform spectroscopy of spin-polarized Andreev states up to ∼250mT, beyond which the spectrum becomes gapless. We identify singlet and triplet states of two quasiparticles occupying different Andreev states through their dispersion in magnetic field. These states are split by exchange interaction and couple via spin-orbit coupling, analogously to two-electron states in quantum dots. We also show that the magnetic field allows to drive a direct spin-flip transition of a single quasiparticle trapped in the junction. Finally, we measure a gate- and field-dependent anomalous phase shift of the Andreev spectrum, of magnitude up to ∼0.7π. Our observations demonstrate alternative ways to manipulate Andreev states in a magnetic field and reveal spin-polarized triplet states that carry supercurrent.

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The proximity effect of superconductivity on confined states in semiconductors gives rise to various bound states such as Andreev bound states, Andreev molecules, and Majorana zero modes. While such bound states do not conserve charge, their fermion parity is a good quantum number. One way to measure parity is to convert it to charge first, which is then sensed. In this work, we sense the charge of Andreev bound states and Andreev molecules in an InSb-Al hybrid nanowire using an integrated quantum dot operated as a charge sensor. We show how charge sensing measurements can resolve the even and odd states of an Andreev molecule, without affecting the parity. Such an approach can be further used for parity measurements of Majorana zero modes in Kitaev chains based on quantum dots.

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The formation of a topological superconducting phase in a quantum-dot-based Kitaev chain requires nearest neighbor crossed Andreev reflection and elastic cotunneling. Here, we report on a hybrid InSb nanowire in a three-site Kitaev chain geometry - the smallest system with well-defined bulk and edge - where two superconductor-semiconductor hybrids separate three quantum dots. We demonstrate pairwise crossed Andreev reflection and elastic cotunneling between both pairs of neighboring dots and show sequential tunneling processes involving all three quantum dots. These results are the next step toward the realization of topological superconductivity in long Kitaev chain devices with many coupled quantum dots.

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A short superconducting segment can couple attached quantum dots via elastic cotunneling (ECT) and crossed Andreev reflection (CAR). Such coupled quantum dots can host Majorana bound states provided that the ratio between CAR and ECT can be controlled. Metallic superconductors have so far been shown to mediate such tunneling phenomena, albeit with limited tunability. Here, we show that Andreev bound states formed in semiconductor-superconductor heterostructures can mediate CAR and ECT over mesoscopic length scales. Andreev bound states possess both an electron and a hole component, giving rise to an intricate interference phenomenon that allows us to tune the ratio between CAR and ECT deterministically. We further show that the combination of intrinsic spin-orbit coupling in InSb nanowires and an applied magnetic field provides another efficient knob to tune the ratio between ECT and CAR and optimize the amount of coupling between neighboring quantum dots.

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We use a hybrid superconductor-semiconductor transmon device to perform spectroscopy of a quantum dot Josephson junction tuned to be in a spin-1/2 ground state with an unpaired quasiparticle. Because of spin-orbit coupling, we resolve two flux-sensitive branches in the transmon spectrum, depending on the spin of the quasiparticle. A finite magnetic field shifts the two branches in energy, favoring one spin state and resulting in the anomalous Josephson effect. We demonstrate the excitation of the direct spin-flip transition using all-electrical control. Manipulation and control of the spin-flip transition enable the future implementation of charging energy protected Andreev spin qubits.

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Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied. In this work, we investigate the impact of the length of InSb-Al nanowire Josephson junctions on the supercurrent resilience against magnetic fields. We find that the critical parallel field of the supercurrent can be considerably enhanced by reducing the junction length. Particularly, in 30 nm long junctions supercurrent can persist up to 1.3 T parallel field─approaching the critical field of the superconducting film. Furthermore, we embed such short junctions into a superconducting loop and obtain the supercurrent interference at a parallel field of 1 T. Our findings are highly relevant for multiple experiments on hybrid nanowires requiring a magnetic-field-resilient supercurrent.@en

Spin qubits in semiconductors are a promising platform for producing highly scalable quantum computing devices. However, it is difficult to realize multiqubit interactions over extended distances. Superconducting spin qubits provide an alternative by encoding a qubit in the spin degree of freedom of an Andreev level. These Andreev spin qubits have an intrinsic spin–supercurrent coupling that enables the use of recent advances in circuit quantum electrodynamics. The first realization of an Andreev spin qubit encoded the qubit in the excited states of a semiconducting weak link, leading to frequent decay out of the computational subspace. Additionally, rapid qubit manipulation was hindered by the need for indirect Raman transitions. Here we use an electrostatically defined quantum dot Josephson junction with large charging energy, which leads to a spin-split doublet ground state. We tune the qubit frequency over a frequency range of 10 GHz using a magnetic field, which also enables us to investigate the qubit performance using direct spin manipulation. An all-electric microwave drive produces Rabi frequencies exceeding 200 MHz. We embed the Andreev spin qubit in a superconducting transmon qubit, demonstrating strong coherent qubit–qubit coupling. These results are a crucial step towards a hybrid architecture that combines the beneficial aspects of both superconducting and semiconductor qubits.

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Semiconductor nanowires coupled to superconductors can host Andreev bound states with distinct spin and parity, including a spin-zero state with an even number of electrons and a spin-1/2 state with odd-parity. Considering the difference in spin of the even and odd states, spin-filtered measurements can reveal the underlying ground state. To directly measure the spin of single-electron excitations, we probe an Andreev bound state using a spin-polarized quantum dot that acts as a bipolar spin filter, in combination with a non-polarized tunnel junction in a three-terminal circuit. We observe a spin-polarized excitation spectrum of the Andreev bound state, which can be fully spin-polarized, despite strong spin-orbit interaction in the InSb nanowires. Decoupling the hybrid from the normal lead causes a current blockade, by trapping the Andreev bound state in an excited state. Spin-polarized spectroscopy of hybrid nanowire devices, as demonstrated here, is proposed as an experimental tool to support the observation of topological superconductivity.

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Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick AlOx layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. In this work, we make multiple tunnel probes along single nanowire hybrids and successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.

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The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like spin-orbit coupling and g-factor, depends on the coupling between the materials. It is predicted that this coupling can be adjusted through the use of electric fields. We study this phenomenon in InSb/Al/Pt hybrids using nonlocal spectroscopy. We show that these hybrids can be tuned such that the semiconductor and superconductor are strongly coupled. In this case, the induced gap is similar to the superconducting gap in the Al/Pt shell and closes only at high magnetic fields. In contrast, the coupling can be suppressed which leads to a strong reduction of the induced gap and critical magnetic field. At the crossover between the strong-coupling and weak-coupling regimes, we observe the closing and reopening of the induced gap in the bulk of a nanowire. Contrary to expectations, it is not accompanied by the formation of zero-bias peaks in the local conductance spectra. As a result, this cannot be attributed conclusively to the anticipated topological phase transition and we discuss possible alternative explanations.

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Majorana bound states constitute one of the simplest examples of emergent non-Abelian excitations in condensed matter physics. A toy model proposed by Kitaev shows that such states can arise at the ends of a spinless p-wave superconducting chain¹. Practical proposals for its realization^2,3 require coupling neighbouring quantum dots (QDs) in a chain through both electron tunnelling and crossed Andreev reflection⁴. Although both processes have been observed in semiconducting nanowires and carbon nanotubes^5–8, crossed-Andreev interaction was neither easily tunable nor strong enough to induce coherent hybridization of dot states. Here we demonstrate the simultaneous presence of all necessary ingredients for an artificial Kitaev chain: two spin-polarized QDs in an InSb nanowire strongly coupled by both elastic co-tunnelling (ECT) and crossed Andreev reflection (CAR). We fine-tune this system to a sweet spot where a pair of poor man’s Majorana states is predicted to appear. At this sweet spot, the transport characteristics satisfy the theoretical predictions for such a system, including pairwise correlation, zero charge and stability against local perturbations. Although the simple system presented here can be scaled to simulate a full Kitaev chain with an emergent topological order, it can also be used imminently to explore relevant physics related to non-Abelian anyons.

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Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the interdot tunnel couplings, we find the measured dispersive signal depends on the electron-charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.

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Quantum error correction will be an essential ingredient in realizing fault-tolerant quantum computing. However, most correction schemes rely on the assumption that errors are sufficiently uncorrelated in space and time. In superconducting qubits, this assumption is drastically violated in the presence of ionizing radiation, which creates bursts of high-energy phonons in the substrate. These phonons can break Cooper pairs in the superconductor and, thus, create quasiparticles over large areas, consequently reducing qubit coherence across the quantum device in a correlated fashion. A potential mitigation technique is to place large volumes of normal or superconducting metal on the device, capable of reducing the phonon energy to below the superconducting gap of the qubits. To investigate the effectiveness of this method, we fabricate a quantum device with four nominally identical nanowire-based transmon qubits. On the device, half of the niobium-titanium-nitride ground plane is replaced with aluminum (Al), which has a significantly lower superconducting gap. We deterministically inject high-energy phonons into the substrate by voltage biasing a galvanically isolated Josephson junction. In the presence of the small-gap material, we find a factor of 2–5 less degradation in the injection-dependent qubit lifetimes and observe that the undesired excited qubit state population is mitigated by a similar factor. We furthermore turn the Al normal with a magnetic field, finding no change in the phonon protection. This suggests that the efficacy of the protection in our device is not limited by the size of the superconducting gap in the Al ground plane. Our results provide a promising foundation for protecting superconducting-qubit processors against correlated errors from ionizing radiation.@en