Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

Journal article (2011)

Authors

M Saadaoui Electronic Components, Technology and Materials - EEMCS
H van Zeijl External organisation
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
W.H.A. Wien Electronic Components, Technology and Materials - EEMCS
HTM Pham Electronic Components, Technology and Materials - EEMCS
C. Kwakernaak OLD Surface and Interface Engineering
HCM Knoops External organisation
W. M.M. Kessels External organisation
RMCM van de Sanden External organisation
FC Voogt External organisation
F Roozeboom External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
More Info
expand_more

Published Date

2011

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials