Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

Saadaoui, M; van Zeijl, H; Sarro, Pasqualina M; Wien, W.H.A.; Pham, HTM; Kwakernaak, C.; Knoops, HCM; Kessels, WMM; van de Sanden, RMCM; Voogt, FC; Roozeboom, F

Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

Journal article (2011)

Authors

M Saadaoui Electronic Components, Technology and Materials -

H van Zeijl External organisation

Pasqualina M Sarro Electronic Components, Technology and Materials -

W.H.A. Wien Electronic Components, Technology and Materials -

HTM Pham Electronic Components, Technology and Materials -

C. Kwakernaak OLD Surface and Interface Engineering

HCM Knoops External organisation

WMM Kessels External organisation

RMCM van de Sanden External organisation

FC Voogt External organisation

F Roozeboom External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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Published Date

2011

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials