18 records found
1
Hydrogen-related hole capture and positive charge build up in buried oxides
The behaviour of deuterium incorporated into the buried oxide of SIMOX.
Oxygen related defects in the top silicon layer of SIMOX; the effect of thermal treatments.
Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces.
NEXT: an experimental effort towards nano-electronic devices.
Diffusion, nucleation and annealing of Co on the H-passivated Si(100) surface studied by UHV-STM
The temperature evolution of utra-thin films in solid-phase reaction of Co with Si(111) studied by scanning tunneling microscopy
The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide
NEXT: an experimental effort towards nanoelectronic devices
Positron annihilation as a tool for the study of defects in the MOS system
Improvement of the ITI-p interface in a-Si:H solar cells using a thin SiO intermediate layer
Transport of positrons in an electrically biased MOS system
Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system
De Materialen
Slow states in VUV irradiated MOS capacitors
Analysis of positron beam data by combined use of the shape and wing parameters
