Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons

Clement, M; de Nijs, JMM; Schut, Henk; van Veen, A

Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons

Journal article (1997)

Authors

M Clement QN/Fysics of NanoElectronics

JMM de Nijs QN/Fysics of NanoElectronics

Henk Schut Old - Section Defects in Materials

A van Veen Old - sect Radiation Physics Group (TN/RF)

Research Group

QN/Fysics of NanoElectronics

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Published Date

1997

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Research Group

QN/Fysics of NanoElectronics

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