Ionic FETs have enormous potential for energy conversion, sensing, and ionic circuits due to their efficient regulation of the nanochannel. Here ionic FETs based on single-crystal silicon nanopores and the rectification of the fabricated devices are studied. The electrical characterization results demonstrated that since the silicon-based nanopores have the advantage of modulating the surface charge due to their semiconductor nature and benefitting from the effective 3D gating effect on the nanochannel, the magnitude and polarity of surface charge can be modulated by the gate voltage. The rectification effect can be adjusted by applying a certain voltage and fulfilling a transition between anion selectivity and cation selectivity when the surface charge polarity is reversed. Moreover, current–voltage characteristics of the reported ionic FET can be switched between ohmic and diode-like regimes. The proposed ionic FETs supply a novel platform to study the ionic properties and have great potential to be applied in large-scale ionic circuits due to their excellent performance. Finally, simulation results prove the surface charge modulated by the gate voltage determines the magnitude and direction of rectification, which is consistent with the reported experiment result.

Nanopore sensors, owing to their distinctive structural properties, can be used to detect biomolecular translocation events. These sensors operate by monitoring variations in electric current amplitude and duration, thereby enabling the calibration and distinction of various biomolecules. As a result, nanopores emerge as a potentially powerful tool in the field of deoxyribonucleic acid (DNA) sequencing. However, the interplay between testing bandwidth and noise often leads to the loss of part of the critical translocation signals, presenting a substantial challenge for the precise measurement of biomolecules. In this context, innovative detection mechanisms have been developed, including optical detection, tunneling current detection, and nanopore field-effect transistor (FET) detection. These novel detection methods are based on but beyond traditional nanopore techniques and each of them has unique advantages. Notably, nanopore FET sensors stand out for their high signal-to-noise ratio (SNR) and high bandwidth measurement capabilities, overcoming the limitations typically associated with traditional solid-state nanopore (SSN) technologies and thus paving the way for new avenues to biomolecule detection. This review begins by elucidating the fundamental detection principles, development history, applications, and fabrication methods for traditional SSNs. It then introduces three novel detection mechanisms, with a particular emphasis on nanopore FET detection. Finally, a comprehensive analysis of the advantages and challenges associated with both SSNs and nanopore FET sensors is performed, and then insights into the future development trajectories for nanopore FET sensors in DNA sequencing are provided. This review has two main purposes: firstly, to provide researchers with a preliminary understanding of advancements in the nanopore field, and secondly, to offer a comprehensive analysis of the fabrication techniques, transverse current detection principles, challenges, and future development trends in the field of nanopore FET sensors. This comprehensive analysis aims to help give researchers in-depth insights into cutting-edge advancements in the field of nanopore FET sensors.

Correction to: Microsystems & Nanoengineering published online 16 May 2023 Correction Following publication of the original article¹, it was noticed that the phrase ‘DNA sequencing’ is incorrect, which should be replaced by ‘biosensing’. The original paper has been updated.

Solid-state nanopores attract widespread interest, owning to outstanding robustness, extensive material availability, as well as capability for flexible manufacturing. Bioinspired solid-state nanopores further emerge as potential nanofluidic diodes for mimicking the rectification progress of unidirectional ionic transport in biological K⁺ channels. However, challenges that remain in rectification are over-reliance on complicated surface modifications and limited control accuracy in size and morphology. In this study, suspended Si₃N₄ films of only 100 nm thickness are used as substrate and funnel-shaped nanopores are controllably etched on that with single-nanometer precision, by focused ion beam (FIB) equipped with a flexibly programmable ion dose at any position. A small diameter 7 nm nanopore can be accurately and efficiently fabricated in only 20 ms and verified by a self-designed mathematical model. Without additional modification, funnel-shaped Si₃N₄ nanopores functioned as bipolar nanofluidic diodes achieve high rectification by simply filling each side with acidic and basic solution, respectively. Main factors are finely tuned experimentally and simulatively to enhance the controllability. Moreover, nanopore arrays are efficiently prepared to further improve rectification performance, which has great potential for high-throughput practical applications such as extended release of drugs, nanofluidic logic systems, and sensing for environmental monitoring and clinical diagnosis.

The application of single-crystal silicon (SCS) nanopore structures in single-molecule-based analytical devices is an emerging approach for the separation and analysis of nanoparticles. The key challenge is to fabricate individual SCS nanopores with precise sizes in a controllable and reproducible way. This paper introduces a fast-stop ionic current-monitored three-step wet etching (TSWE) method for the controllable fabrication of SCS nanopores. Since the nanopore size has a quantitative relationship with the corresponding ionic current, it can be regulated by controlling the ionic current. Thanks to the precise current-monitored and self-stop system, an array of nanoslits with a feature size of only 3 nm was obtained, which is the smallest size ever reported using the TSWE method. Furthermore, by selecting different current jump ratios, individual nanopores of specific sizes were controllably prepared, and the smallest deviation from the theoretical value was 1.4 nm. DNA translocation measurement results revealed that the prepared SCS nanopores possessed the excellent potential to be applied in DNA sequencing. [Figure not available: see fulltext.]

Nanopores have attracted widespread attention in DNA sequencing and protein or biomarker detection, owning to the single-molecule-scale detection accuracy. Despite the most use of naturally biological nanopores before, solid-state nanopores are widely developed with strong robustness, controllable sizes and geometries, a wide range of materials available, as well as flexible manufacturing. Therefore, various techniques typically based on focused ion beam or electron beam have been explored to drill nanopores directly on free-standing nanofilms. To further reduce and sculpt the pore size and shape for nano or sub-nano space-time sensing precision, various controllable shrinking technologies have been employed. Correspondingly, high-energy-beam-induced contrac-tion with direct visual feedback represents the most widely used. The ability to change the pore diameter was attributed to surface tension induced original material migration into the nanopore center or new material deposition on the nanopore surface. This paper reviews typical solid-state nanopore shrinkage technologies, based on the careful summary of their principles and characteristics in particularly size and morphology changes. Furthermore, the advantages and disadvantages of different methods have also been compared completely. Finally, this review concludes with an optimistic outlook on the future of solid-state nanopores.

Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance. The sensitivity and current change of the AlGaN/GaN heterostructure to 1-200 ppm NO2/air are increased up to about 20 and 12 times compared to conventional gate device, respectively. The response time is also reduced to only about 25 % of value for conventional device. The sensor has a suspended circular membrane structure and an integrated micro-hotplate for adjusting the optimum working temperature. The sensitivity (response time) increases from 0.75 % (1250 s) to 3.5 % (75 s) toward 40 ppm NO2/air when temperature increase from 60°C to 300°C. The repeatability and cross-sensitivity of the sensor are also demonstrated. These results support the practicability of a high accuracy and fast response gas sensor based on the suspended gate recessed AlGaN/GaN heterostructure with an integrated micro-heater.

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO₃nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was integrated for chip level heating and cooling. Our device when exposed to UV wavelength exhibits a high responsivity of 1.67 × 10⁴A W⁻¹at 240 nm and a sharp cut-off wavelength of 275 nm. More importantly, the persistent photoconductivity (PPC) effect can be eliminated by a novel method, mono-pulse heating reset (MHR), which consists in applying an appropriate pulse voltage to the micro-heater right after the removal of the UV illumination. The recovery time was reduced from hours to just seconds without reducing the high responsivity and stability of the photodetector. The UV detection, high responsivity, high stability, controllable recovery process and low production cost of GaN-based photodetectors make these devices extremely attractive for several applications, such as fire detection and missile and rocket warning.

High performance mixed potential type NO₂ sensors using porous yttria-stabilized zirconia (YSZ) layers doped with different concentration graphite as solid electrolyte and LaFeO₃ as sensing electrode were fabricated and characterized. LaFeO₃ was prepared by a typical citrate sol–gel method and characterized using XRD. The surface morphology and porosity of porous YSZ layers were characterized by field emission scanning electron microscope (FESEM). The sensor doped with 3 wt% graphite shows the highest response (−76.4 mV to 80 ppm NO₂) and the response is linearly dependent on the logarithm of NO₂ concentration in the range of 10–200 ppm. The sensor measurement results also present good repeatability and cross-sensitivity.

This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and a 50 Hz pulsed heating frequency, a reduction of 30%-45% in decay time is measured compared to DC heating.

A suspended WO₃-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO₃-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.

We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO₃) nano-film modified gate for nitrogen dioxide (NO₂) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the HEMT self-heating are studied and modeled. A significant detection is observed for exposure to a low concentration of 100 ppb NO₂ /N₂ at ∼300 °C. For a 1 ppm NO₂ gas, a high sensitivity of 1.1% with a response (recovery) time of 88 second (132 second) is obtained. The effects of relative humidity and temperature on the gas sensor response properties in air are also studied. Based on the excellent sensing performance and inherent advantages of low power consumption, the investigated sensor provides a viable alternative high performance NO₂ sensing applications. It is suitable for continuous environmental monitoring system or high temperature applications.