Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

Journal article (2024)

Authors

Chenyang Yang University of Chinese Academy of Science, Chinese Academy of Sciences

Jianwen Sun Tsinghua University

Yulong Zhang Tsinghua University

Jingya Tang University of Chinese Academy of Science, Chinese Academy of Sciences

Zizheng Liu Chinese Academy of Sciences

Teng Zhan Chinese Academy of Sciences

Dian-Bing Wang Chinese Academy of Sciences

Kouchi Zhang Electronic Components, Technology and Materials -

Zewen Liu Tsinghua University

Xian-En Zhang Shenzhen institute of Advances Technology, University of Chinese Academy of Science, Chinese Academy of Sciences

Research Group

Electronic Components, Technology and Materials () (TU Delft)

SARS-CoV-2 AlGaN/GaN Biosensors Ultrasensitive detection Label-free

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Published Date

2024

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect SARS-CoV-2 spike proteins at an impressively low concentration of 10−22 M. The sensor was also applied to pseudoviruses and SARS-CoV-2 ΔN virions that display the Spike proteins with a single virion particle sensitivity. These features validate the potential of AlGaN/GaN HEMT biosensors for point of care tests targeting SARS-CoV-2. This research not only provides the first HEMT biosensing platform for ultrasensitive and label-free detection of SARS-CoV-2.

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- Embargo expired in 16-09-2024