Self-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including higher sensitivity, lower power consumption, and simpler design. This study introduces a breakthrough self-powered PD that uses a Schottky junction of 2D α-MoO₃/iridium (Ir)/Si ultrathin film to detect 365 nm light at 0 V bias through using atomic layer deposition (ALD) and sputtering systems. The PD response is enhanced by plasmonic Ir-induced hot carriers, enabling detection in a mere 0.1 ms. Incorporating a 4 nm Ir layer boosts the responsivity from 0 to 34 A W⁻¹, and the external quantum efficiency is elevated from 0 to 7E11 under 365 nm light illumination. It also has a high I_ON/I_OFF ratio of 11.22E4 at 0 V. These results make the MoO₃/4 nm Ir/Si structure an interesting option for self-powered PDs with high efficiency, and the use of a simple ALD system for large-scale fabrication of 2D α-MoO₃ on hot carrier Ir plasmonic layer. The findings of this research hold tremendous promise in the field of UV sensing and can lead to exciting developments in military and civilian technology.

Photonic crystal (PhC) has been studied for their potential to improve the efficiency of Cu₂ZnSnS₄ solar cells by increasing the generated photocurrent by integrating it as a back reflector with almost zero transmission through the absorption active zone of the solar cell. It was found that the thickness of PhC layers greatly affects the width of the photonic bandgap and that increasing the thickness of VO₂ causes it to shift to a higher wavelength range. The PhC layers were added at the back side of the solar cell in two different configurations: (Monoclinic (M) VO₂/TiO₂) and (Tetragonal (T) VO₂/TiO₂) via SCAPS model. The study found that the (M VO₂/TiO₂) configuration led to an enhancement of the device's efficiency from 11.02 to 12.79%, while the (T VO₂/TiO₂) reaches 16.88%. The study concluded that the PhC layers enhance the light-matter coupling and photonic coupling and improvement in the device's performance.

This study was on the optoelectronic properties of multilayered two-dimensional MoS₂ and WS₂ materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO₂, and O₂ environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS₂ (n-type)/Si (p-type) and WS₂ (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10⁵ cm⁻² for WS₂ thin film. The IV electrical results revealed that WS₂ is more reactive than MoS₂ film under different gas stimuli. WS₂ film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10² cm²/V. WS₂ film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO₂ environment was observed. Additionally, the external quantum efficiency of WS₂ revealed a remarkable enhancement in the CO₂ environment of 1.62 × 10⁸ compared to MoS₂ film with 6.74 × 10⁶. According to our findings, the presence of CO₂ on the surface of WS₂ improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS₂ as a photodetector under gas stimuli for future optoelectronic applications.

Studying the mechanical properties mismatching of SnSe₂/ZrS₂ 2D materials with Voigt-Reuss-Hill (VRH) schemes promise a novel structure for sensing applications. For the first time, we studied the effect of mechanical mismatching properties of SnSe₂/ZrS₂ multilayers with VRH schemes on the acoustic wave's propagation through acoustic superlattice (AS). We proposed [(SnSe₂/ZrS₂)⁴] superlattice with VRH schemes as a new THz multichannel sensor for acetonitrile sensing. The [(SnSe₂/ZrS₂)⁴] with Voigt scheme introduced several resonant peaks for acetonitrile inside the superlattice bandgap compared to Hill and Reuss schemes. The appropriate relation between resonance frequency shift and resonance bandwidth is the key to improving the multichannel sensor's sensitivity to liquid characteristics. Further, we studied the effect of low and high temperatures on our multichannel sensor. Furthermore, the highest sensitivity and resonance frequency were recorded by our AS with the Voigt scheme towards acetonitrile having values of 0.287 (GHz/(kg/m³)) and 0.237 THz at 0 °C. The results show a novel sensitivity of acetonitrile for low-temperature environments.

Ultra-sensitive greenhouse gas sensors for CO₂, N₂O, and CH₄ gases based on Fano resonance modes have been observed through periodic and quasi-periodic phononic crystal structures. We introduced a novel composite based on metal/2D transition metal dichalcogenides (TMDs), namely; platinum/platinum disulfide (Pt/PtS₂) composite materials. Our gas sensors were built based on the periodic and quasi-periodic phononic crystal structures of simple Fibonacci (F(5)) and generalized Fibonacci (FC(7, 1)) quasi-periodic phononic crystal structures. The FC(7, 1) structure represented the highest sensitivity for CO₂, N₂O, and CH₄ gases compared to periodic and F(5) phononic crystal structures. Moreover, very sharp Fano resonance modes were observed for the first time in the investigated gas sensor structures, resulting in high Fano resonance frequency, novel sensitivity, quality factor, and figure of merit values for all gases. The FC(7, 1) quasi-periodic structure introduced the best layer sequences for ultra-sensitive phononic crystal greenhouse gas sensors. The highest sensitivity was introduced by FC(7, 1) quasiperiodic structure for the CH₄ with a value of 2.059 (GHz/m.s⁻¹). Further, the temperature effect on the position of Fano resonance modes introduced by FC(7, 1) quasi-periodic PhC gas sensor towards CH₄ gas has been introduced in detail. The results show the highest sensitivity at 70 °C with a value of 13.3 (GHz/°C). Moreover, the highest Q and FOM recorded towards CH₄ have values of 7809 and 78.1 (m.s⁻¹)⁻¹ respectively at 100 °C.

Gold (Au) nanoparticles trapped within Cu₂SnS₃ (CTS) thin films were effectively deposited on a low-cost glass substrate using a simple pulsed laser deposition of 15 mJ for 5 ns at a 10 Hz repetition rate. The film's structural, morphological, topography, optical, and optoelectronic properties were investigated. Highly crystalline ternary chalcogenide CTS with tetragonal symmetry and 17 nm grain size is prepared. The 110 Ω resistivity of the thin film increases up to 125 Ω indicating a negative photoresponse under visible light excitation. The decrease in the photocurrent is also observed with Cu₂SnS₃/Au/Cu₂SnS₃ sandwich ternary chalcogenide structure at resistivities values from 31 to 35 Ω and a Joule effect influence the presence of plasmonic Au nanoparticle interlayers involved a lower phonon disorder given a higher photoresponse effect as predicted from Urbach energy.

Artificial periodic structures drew a lot of attention because of their ability to be built with novel acoustic features. A novel nanostructured phononic superlattice (NPhS) based two-dimensional multilayer structure as a high-sensitive multichannel liquid sensor that provided bright multichannel band gap windows has been introduced. Theoretically, the designed structure is composed of [(MoS₂/PtSe₂)⁴] NPhS with a cavity filled with different concentrations of Ethylene Glycol at room temperature toward acoustic bandgap engineering multichannel sensor. We examined the interaction of acoustic waves with nano and bulk phononic superlattice (PhS) structures. In addition, we studied the effect of using different analyte layer thicknesses on the resonance peaks that appeared inside the band gaps. Many sharp resonance peaks appeared in multi-band gaps, which introduced high sensitivity, Q-factor, and figure of merit (FOM) values for each concentration of Ethylene Glycol. Furthermore, the effect of resonance peaks' full width at half maximum (FWHM) on the Q-factor of the NPhS multichannel sensor has been studied. From our results, the relation between the sensitivity of our multichannel sensor and the resonance frequency of each concentration shows a linear behavior. The highest sensitivity was obtained for a 1.00 m% concentration of 0.21 (GHz/(kg/m³)) at a resonance frequency value of 0.21 THz. In addition, the NPhS multichannel sensor recorded the highest Q-factor for 0.8069 m% with a value of 1744 and the highest FOM for 0.3819 m% with a value of 0.05988 (m³/kg). Moreover, we studied the effect of temperature on the sensitivity of the NPhS multichannel sensor. We showed the highest sensitivity value of 1.79 (GHz/^o C) at 10 °C towards Ethylene Glycol. Further, the dispersion relation of an acoustic wave propagating inside perfect and defected nano and bulk PhS structures has been introduced. Our proposed multichannel liquid sensor can introduce a novel sensitivity at Terahertz frequency ranges.

Vanadium oxide (VO₂) is considered a Peierls–Mott insulator with a metal–insulator transition (MIT) at T_c = 68^◦ C. The tuning of MIT parameters is a crucial point to use VO₂ within thermoelectric, electrochromic, or thermochromic applications. In this study, the effect of oxygen deficiencies, strain engineering, and metal tungsten doping are combined to tune the MIT with a low phase transition of 20^◦C in the air without capsulation. Narrow hysteresis phase transition devices based on multilayer VO₂, WO₃, Mo_0.2W_0.8O_3, and/or MoO₃ oxide thin films deposited through a high vacuum sputtering are investigated. The deposited films are structurally, chemically, electrically, and optically characterized. Different conductivity behaviour was observed, with the highest value towards VO_1.75/WO_2.94 and the lowest VO_1.75 on FTO glass. VO_1.75/WO_2.94 showed a narrow hysteresis curve with a single-phase transition. Thanks to the role of oxygen vacancies, the MIT temperature decreased to 35^◦C, while the lowest value (T_c = 20^◦C) was reached with Mo_0.2W_0.8O₃/VO₂/MoO₃ structure. In this former sample, Mo_0.2W_0.8O₃ was used for the first time as an anti-reflective and anti-oxidative layer. The results showed that the MoO₃ bottom layer is more suitable than WO₃ to enhance the electrical properties of VO₂ thin films. This work is applied to fast phase transition devices.

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO2) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO2 as a strongly correlated phase transition material and tungsten diselenide (WSe2) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO2 with WSe2 in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO2 layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO2 thickness. For the monoclinic case of VO2, the number of the forbidden bands increase with the number of layers of WSe2. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.

The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS₂) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO₂. MoWO₃/VO₂/MoS₂ photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO₃/VO₂/MoS₂/Si with MoS₂ deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO₂ layer on MoS₂/Si causes a redshift and intensive MoS₂ Raman peaks. Interestingly, the incorporation of VO₂ dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO₂/(30 s)MoS₂/Si from < 1 to > 1. By increasing the deposition time of MoS₂ from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO₂/(60 s)MoS₂/Si structure. Both the VO₂/(60 s)MoS₂/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS₂/Si structure. The MoWO₃/VO₂/(60 s)MoS₂/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 10⁸ Jones detectivity, and ~ 1.0 × 10¹⁰ quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.

Effect of in-/ex-situ annealing on the structure, optical, photoluminescence, electrical characterization and gas sensing dynamics on CdS thin films are presented. Raman characterizations showed an increase in the peak intensity with increasing the annealing temperature under ex-situ, while a lower peak intensity observed through the in-situ annealing condition. No shift was observed in the Photoluminescence peaks through the yellow band peaks of in-situ annealed samples, however, a slightly blue shift was observed through the ex-situ annealed samples. High conductivity was observed for all samples, while in the case of in-situ RT, in-situ 100 °C, ex-situ 200 °C and ex-situ 300 °C, a CO₂ and O₂ gas sensing activity have been tested. The ex-situ 300 °C sample shows a higher response towards CO₂ compared with the ex-situ 200 °C film. While, both in-situ RT and 100 °C sensors show the same response towards CO₂ with a high gas response. However, the in-situ 100 °C sensor has the highest response compared to in-situ RT film with a high response of 25% at 50 sccm towards O₂.

Molybdenum - tungsten oxide (Mo_1-xW_xO₃, x = 1, 0.8, and 0.6) nanostructured thin films-based room temperture (RT) gas sensors are prepared by means of reactive RF magnetron co-sputtering at 400 °C. The structural, morphology, topography, optical, and electrical characterizations of the prepared sensors are carried out by XRD Rietveld structure refinement analyses, SEM, AFM, UV-VIS spectrophotometer, and source meter. By controlling the deposition temperture of 400 °C, a co-existing phase of MoO₃ and MoO₂ in WO₃ matrix is presented with high oxygen vacancies concentration as calculated from the XRD Rietveld Refinement analyses. By increasing the Mo content, the calculated oxygen vacancies concentration increases by factor of 1.36. The optical characterization of Mo_0.2W_0.8O₃ thin film shows a high transparent of 99.6% at 500 nm. The prepared thin films have successfully tested to detect carbon dioxide (CO₂) at RT (20 °C) with high selectivity and repeatability. The Mo_0.4W_0.6O₃ sensor film shows an electrical Schottky contact with fast response and recovery times towards CO₂ under UV light activation. Mo_0.4W_0.6O₃ thin film under dark and UV conditions were able to detect low CO₂ concentration of 2 and 0.5 sccm CO₂ at RT, respectively. Under UV illumination, Mo_0.4W_0.6O₃ film shows a fast response and recovery time of 6.53 and 8.05 s at 0.5 sccm with sensitivity of 29.19%. Under UV photonic activation, higher electron concentration is presented in the oxide surface, which leads to high probability for reaction with CO₂ molecules, and consequently enhanced the chemisorption of CO₂. The enhanced CO₂ gas sensitivity and fast response may refer to the high oxygen vacancies concentration and the active role of the grain boundaries in MoO₂, MoO₃ and WO₃ mixed-valence nanostructured under UV activation.

The greenhouse effect is involving global heating and climate change within the world. Carbon dioxide (CO₂)is one of the major gas at the origin of this effect, but also the byproduct of human activity. Therefore, monitoring the indoor/outdoor CO₂ emission by gas sensors is one of the priorities for environmental preservation. In this paper, the sensing performance of CO₂ towards two different O-rich films have been studied; graphene oxide (GO)and vanadium dioxide (VO₂). The preparation of GO film has been carried out by spray pyrolysis on fluorine tin oxide (FTO)prepared by the modified Hummers method. While the VO2 film has been sol-gel spin-coated on a glass substrate. Both films have been characterized using XRD, SEM and electrical properties. The CO₂ gas sensing mechanism and the role of oxygen vacancies in VO₂ are addressing. The oxygen functional groups in GO play a main role in the CO₂ gas the sensitivity level and response time. Their gas sensing performances have been investigated based on measuring the response vs recovery time, dynamic response curve analysis and sensitivity. In order to better understand the sensing mechanism, characterization has been done with different gas concentrations. Both GO and VO₂ based CO₂-sensors are acted as an n-type sensor. Sensing behavior of GO at RT has explained to be mainly mediated by the oxygen functional groups and a wide range of active sites. In the other hand, VO₂ contains oxygen vacancies and more defect sites which play a main role in the RT sensing activity and low recovery time.