UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films’ structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).@en

Desert environments are prime locations for concentrated solar power (CSP) applications due to abundant direct normal irradiance. Despite this advantage, the accumulation and adhesion of dust on CSP mirror surfaces present significant challenges to plant efficiency. This paper comprehensively explores soiling phenomena and dust adhesion mechanisms, complemented by advanced measurement techniques tailored for CSP reflector mirrors. By elucidating the factors influencing dust accumulation and delving into the thermodynamics of self-cleaning coatings, alongside an analysis of various mirror materials, this study aims to enrich our understanding of soiling in CSP systems. This study aims to provide valuable insights that will help develop strategies to reduce dust-related efficiency losses in CSP plants, ultimately supporting the development of more reliable and sustainable solar energy solutions for the MENA region. @en

Copper zinc tin sulfide (CZTS) thin films were synthesized on soda lime glass using pulsed laser deposition (PLD) at room temperature. Introducing gold nanoparticles (AuNPs) in a sandwich structure led to increased CZTS particle size and a shift in the localized surface plasmon resonance (LSPR) peak of the AuNPs, influenced by different laser energy levels. The absorption measurements revealed intriguing behavior across the visible and near-infrared (NIR) regions, making these films appealing for 1 Sun photodetectors. Furthermore, the presence of AuNPs in the sandwich structure reduced microstrain effects, measuring 1.94 × 10−3 compared to 3.38 × 10−3 in their absence. This reduction directly enhances carrier transport, which is particularly beneficial for accelerating the performance of photodetector devices. This effect of AuNPs also contributed to higher dielectric coefficients, further improving the photodetector performance. Under 1 Sun illumination conditions, this enhancement resulted in a rapid rising time of 95.4 ms, showcasing the potential for faster photodetection.@en

This study pioneers the use of CuInGaSe2, a quaternary alloy, in Schottky barrier diodes, beyond its traditional application in solar cells, highlighting its potential in sustainable energy technologies such as supercapacitors. We delve into its unique electrical and dielectric characteristics by introducing CuInGaSe2 into the Schottky barrier diode device, synthesized via an innovative liquid phase epitaxy on silicon substrates. Our investigation into the structural, electrical, and dielectric properties reveals the alloy's exceptional capacitance behavior, which transitions from positive to negative with varying frequency. It takes negative values at a frequency of 12 900 Hz and a temperature of 300 K. In comparison, at a frequency of 1216 Hz, all curves take negative and positive values, demonstrating significant promise for enhancing the efficiency and sustainability of energy storage solutions. These findings contribute to the advancement of supercapacitor production and underscore the broader applicability of CuInGaSe2 in promoting sustainable energy technologies.@en

This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.@en

This study introduces the development of novel, flexible gas sensors operating at room temperature (RT), utilizing a graphene oxide (GO) via the modified Hummers' method and bacterial nanocellulose (BNC) composite to enhance gas detection in industrial and environmental settings. The composite materials, denoted as GO@BNC, were synthesized with varying GO concentrations ranging from 2 % to 30 %, aiming to investigate their responsiveness to gases such as carbon dioxide (CO₂), oxygen (O₂), acetone (Ac), and ethanol (Eth). The prepared nanomaterials were characterized using FT-IR, Raman, TGA, SEM, and AFM techniques. The bandgap of Go ranges from 4.19, 3.47, 3.16, 2.79, and 2.48 eV for 2, 5, 10, 20, and 30 % GO concentrations, respectively. Notably, the sensor containing wt % of 20 % GO concentration exhibited remarkable sensitivity to Ac, achieving a 270 % increase in resistance at a concentration of 250 μL/L. Conversely, the sensor with a wt % of 30 % GO composition showed superior sensitivity to Eth, with a 420 % signal enhancement under similar conditions. Further modification of GO@BNC through mild reduction resulted in the formation of reduced graphene oxide (rGO@BNC) composites intended to assess the functional groups' impact on sensing performance. Our findings underscore the potential of GO@BNC composites as sustainable and efficient materials for fabricating eco-friendly flexible gas sensors and devices for detecting organic compounds.

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The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombination, and interface polarization is proposed to examine the solar cells' performance numerically. The functioning processes of n-In_0.42Ga_0.58N/i-(In, Ga)N/p-In_0.42Ga_0.58N solar cells at room temperature were investigated by calculating their characteristics for the AM1.5D, AM1.5G, and AM0 American Society for Testing and Materials experimental data. Our results show that the indium content, thickness, and defect density of the intrinsic layer strongly influence the characteristics of the InGaN solar cells. As the In-mole fraction increases, V_oc, FF and efficiency diminish to reach an independent regime for high In-content. A higher-quality 2μm−In_0.43Ga_0.57N for 10¹⁴cm⁻³ defect concentration can exhibit as high an efficiency as ≅11.3%, dropping to ≅4.12% for 10¹⁶cm⁻³ one.

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Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confinement potentials. The primary focus of this inquiry centers on the analysis of binding energy, electron probability distribution, and diamagnetic susceptibility in connection with both the ground (1s) and excited (2p) electron states. Utilizing advanced computational techniques, specifically the Finite Elements Method (FEM) implemented through Python code, this study unveils a marked alteration in the interaction between electrons and impurities when exposed to external fields. Significantly, the characteristics of the confinement potential exert a substantial influence on the explored physical parameters. This research significantly advances our understanding of the interaction between impurities and intense fields, offering valuable insights into solid-state phenomena within low-dimensional systems. Consequently, it contributes to the design and fabrication of next-generation applications in the field of quantum well systems, encompassing areas such as lighting, detection, information processing, sensing, and energy conversion.

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This study explores the structural, electronic, and optical properties of sandwich-structured thin films composed of WO3, MoWO3, and MoO3 as window layers on VO2/WO3 via a physical vapor deposition method. Morphological analysis demonstrates the evolution of distinct nanowires, offering insights into the lattice strain of the VO2 layer toward high-performance thermochromatic devices. Temperature-dependent sheet resistivity is investigated, showcasing significant improvements in conductivity for samples with MoO3 as a window layer. The electrical and optical properties of the MoO3/VO2/WO3 device showed a phase transition temperature (Tc) of 36.8 °C, a transmittance luminous (Tlum) of 54.57%, and a solar modulation ability (ΔTsol) of 12.43. This comprehensive analysis contributes to understanding the growth of nanowires on multi-layered thin films, offering valuable insights into potential applications in bright windows.@en

In this study, we investigated the influence of structural parameters, including active region dimensions, electric field intensity, In-composition, impurity position, and potential profiles, on the energy levels, sub-gap transitions, and photovoltaic characteristics of a p-GaN/i-(In, Ga)N/GaN-n (p-QW-n) structure. The finite element method (FEM) has been used to solve numerically the Schrödinger equation. We found that particle and sub-gap energy levels are susceptible to well width, electric field, and impurity position. Particle energy decreases with increasing well size and electric field intensity, while impurity position affects energy based on proximity to the well center. Potential profile shapes, such as rectangular (RQW) and parabolic (PQW), also play a significant role, with PQW profiles providing stronger particle confinement. IB width increases with electric field intensity and saturates at higher In-content. Voc increases with field strength but decreases with In-content, and the parabolic profile yields higher efficiency than the rectangular one. Photovoltaic efficiency is improved with an appropriately oriented electric field and decreases with higher In-content and field intensity. These findings highlight the critical role of structural parameters in optimizing QW-IBSC performance.@en

By using DFT simulations employing the GGA/PBE and LDA/CA-PZ approximations, the effects of the Hubbard U correction on the crystal structure, electronic properties, and chemical bands of the cubic phase (Pm3̲m) of STO were investigated. Our findings showed that the cubic phase (Pm3̲m) STO’s band gaps and lattice parameters/volume are in reasonably good accordance with the experimental data, supporting the accuracy of our model. By applying the DFT + U method, we were able to obtain band gaps that were in reasonably good agreement with the most widely used experimental band gaps of the cubic (Pm3̲m) phase of STO, which are 3.20 eV, 3.24 eV, and 3.25 eV. This proves that the Hubbard U correction can overcome the underestimation of the band gaps induced by both GGA/PBE and LDA/CA-PZ approximations. On the other hand, the Sr-O and Ti-O bindings appear predominantly ionic and covalent, respectively, based on the effective valence charges, electron density distribution, and partial density of states analyses. In an attempt to enhance the performance of STO for new applications, these results might also be utilized as theoretical guidance, benefitting from our precise predicted values of the gap energies of the cubic phase (Pm3̲m).@en

In this work, a ZnO nanowires/graphene nanohybrid was synthesized by a three steps approach. Copper substrates were covered with graphene by chemical vapor deposition, further ZnO nanowires were electrochemically deposited on the as grown graphene on copper and finally a transfer process was employed for moving the heterostructure onto a different substrate. A comprehensive structural analysis which included scanning electron microscopy, X-ray diffraction and Raman measurements revealed that the ZnO nanowires crystallize in wurtzite structure perpendicular to graphene, the process leading to the formation of a nanohybrid heterostructure. The band gap energy of the ZnO nanowires deposited on graphene was estimated to be 3.11 eV, as calculated from the reflectance spectrum analysis. The GGA-PBE+U within Grimme (DFT-D) approach was used to provide an accurate description of the interface structure in terms of electronic and optical properties, confirming that the decrease in the band gap energy of ZnO nanowires is caused by the interaction with the graphene surface. The findings of this study could serve as an experimental and theoretical reference for upcoming studies on ZnO NWs/Graphene nanohybrid-based optoelectronic applications.

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The current work presents the possibility of tuning the dielectric parameters by changing the temperature, voltage, and frequency. The unusual behavior of some parameters was attributed to the lattice mismatch constant between gallium arsenide (GaAs) and silicon (Si) and the crystal defects between them. In this article, a thin GaAs film has been grown on Si substrates by liquid phase epitaxial (LPE) as n-GaAs/p-Si heterostructure. Despite the lattice mismatch between GaAs and Si, our interest in this article was focused on investigating the electrical and dielectric properties by I-V and C-V measurements. This was distinguished in the behavior of the dielectric properties such as the imaginary part of modules M″, the real and imaginary part of electrical conductivity σ^′ac and σ^″ac, respectively, which has not been seen before at high frequencies.

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The use of waste materials has gained attention as a sustainable approach in various industries. Cigarette waste, which is typically discarded as a non-recyclable material, poses a significant environmental challenge due to its toxicity and slow decomposition rate. However, by incorporating this waste into ceramic bricks, new approaches for waste management and resource utilization are explored. This research work provides a detailed evaluation of the possibility of utilizing natural zeolite tuff incorporated with cigarette waste to produce sustainable ceramic bricks. Uniform powders are produced by milling various combinations of zeolitic tuff and cigarette waste using a planetary ball mill. The substitution ratios ranged from 0% to 12% by weight of the zeolitic tuff, with increments of 2%. Ceramic discs were formed by dry pressing and then subjected to sintering at different heat treatment temperatures (950–1250 °C). The impact of the inclusion of cigarette waste on the microstructural and technical features of zeolite tuff-based ceramic bricks has been thoroughly investigated. The results of the experiments demonstrate that incorporating cigarette waste into the development of ceramic bricks leads to improved thermal insulation properties, with thermal conductivity ranging from 0.33 to 0.93 W/m·K. Additionally, these bricks exhibit a lighter weight in a range of 1.45 to 1.96 g/cm3. Although the inclusion of cigarette waste slightly reduces the compressive strength, with values ranging from 6.96 to 58.6 MPa, it still falls within the acceptable range specified by standards. The inclusion of cigarette waste into zeolite tuff is an innovative approach and sustainable practice for reducing energy consumption in buildings while simultaneously addressing the issue of waste disposal and pollution mitigation.@en

The increasing demand for safe and high-energy-density battery systems has led to intense research into solid electrolytes for rechargeable batteries. One of these solid electrolytes is the NASICON-type Li1+xAlxTi2−x(PO4)3 (LATP) material. In this study, different boron compounds (10% B2O3 doped, 10% H3BO3 doped, and 5% B2O3 + 5% H3BO3 doped) were doped at total 10 wt.% into the Ti4+ sites of an LATP solid electrolyte to investigate the structural properties and ionic conductivity of solid electrolytes using the solid-state synthesis method. Characterization of the synthesized samples was conducted using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS). The XRD patterns of the boron-doped LATP (LABTP) samples show that the samples have a rhombohedral phase with space group R3̲c together and low amounts of impurity phases. While all the LABTP samples exhibited similar ionic conductivity values of around 10−4 S cm−1, the LABTP2 sample doped with 10 wt.% H3BO3 demonstrated the highest ionic conductivity. These findings suggest that varying B3+ ion doping strategies in LATP can significantly advance the development of solid electrolytes for all-solid-state lithium-ion batteries.@en

The current work presents a new structure based on Au/PVA/SiO2/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO2/Si using the spin-coating technique. The silicon wafer was left to be oxidized in a furnace at 1170 k for thirty minutes, creating an interdiffusion layer of SiO2. The variations in the dielectric constant (Є′), dielectric loss (Є″), and dielectric tangent (tanδ) with the change in the frequency, voltage, and temperature were analyzed. The results showed an increase in the dielectric constant (Є′) and a decrease in the dielectric loss (Є″) and tangent (tanδ); thus, the Au/PVA/SiO2/p-Si/Al heterostructure has opened up new frontiers for the semiconductor industry, especially for capacitor manufacturing. The Cole–Cole diagrams of the Є″ and Є′ have been investigated at different temperatures and voltages. The ideality factor (n), barrier height (Φb), series resistance (Rs), shunt resistance (Rsh), and rectification ratio (RR) were also measured at different temperatures.@en

By means of the B3LYP and B3PW hybrid exchange-correlation functionals, as it is included in the CRYSTAL computer code, we performed ab initio computations for BaSnO3 and BaZrO3 perovskite (001) surfaces. For BaSnO3 and BaZrO3 perovskite (001) surfaces, with a few exceptions, all atoms of the upper surface layer relax inwards, all atoms of the second surface layer relax outwards, and all third layer atoms, again, relax inwards. The relaxation of BaSnO3 and BaZrO3 (001) surface metal atoms for upper two surface layers, for both BaO and BO2-terminations, as a rule, are considerably larger than the relaxation of relevant oxygen atoms. The BaO (1.30 eV) and ZrO2-terminated (1.31 eV) BaZrO3 (001) surface energies are almost equal. The BaZrO3 perovskite BaO (4.82 eV) and ZrO2-terminated (4.48 eV) (001) surface Г-Г band gaps are reduced regarding the respective bulk Г-Г band gap value (4.93 eV). The B–O chemical bond populations in BaSnO3 and BaZrO3 perovskite bulk always are smaller than near their SnO2 and ZrO2-terminated (001) surfaces, respectively.@en

In this groundbreaking study, we unveil the remarkable structural, electronic, and optical Properties of the newly discovered double perovskite material, K₂AgBiI₆, presenting a paradigm shift in materials science. The unique crystal structure and diverse atomic interactions inherent in this double perovskite make it an up-and-coming candidate for various technological applications, particularly in photovoltaics; owing to its stability and resistance to heat and humidity, we aim to shed light on the extraordinary potential of K₂AgBiI₆. Our study provides valuable insights for researchers engaged in tailored material design. We anticipate that the exceptional electronic properties of K₂AgBiI₆ will not only redefine the boundaries of materials engineering but also catalyze unprecedented advances in sustainable technology. Employing the powerful computational tool CASTEP, we conducted detailed electronic structure calculations within the framework of Density Functional Theory (DFT) to unravel the electronic properties of the double perovskite K₂AgBiI₆. Our investigation thoroughly explored structural properties, band structure, total density of states (DOS), and partial density of states (PDOS). Furthermore, we systematically examined the influence of different exchange-correlation functionals, including LDA, GGA, and m-GGA, on the electronic and optical features of the material by presenting a comparative analysis of these approximations.

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Tandem solar cells have a wider photon absorption range, allowing them to provide better efficiency than single-junction SC. The upper cell absorbs high-energy photons, while the lower cell absorbs low-energy filtered photons. However, in order to obtain affordable, efficient, and long-lasting SC, the absorber layers of the top and bottom cells must be integrated with an adequate bandgap. This research suggests tandem perovskite solar cells as upper band active materials in this setting. The Si homojunction solar cell's performance was improved by investigating the thicknesses of the p−type and n−type layers, doping concentrations, and defect densities. The thickness variation of the perovskite solar cell (100−400nm) is then optimized. To precisely replicate the tandem devices, the estimated spectra of the perovskite SC are optically filtered onto the lower cells. Current matching was achieved by adjusting the thickness of the perovskite sub-cell with different bottom layer thicknesses, and the optimized efficiency of 36.26% for the perovskite/Si tandem device was shown. The discoveries will open the door for the upcoming creation of high−efficiency, low-energy solar cells.

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This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.@en