This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.@en

Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confinement potentials. The primary focus of this inquiry centers on the analysis of binding energy, electron probability distribution, and diamagnetic susceptibility in connection with both the ground (1s) and excited (2p) electron states. Utilizing advanced computational techniques, specifically the Finite Elements Method (FEM) implemented through Python code, this study unveils a marked alteration in the interaction between electrons and impurities when exposed to external fields. Significantly, the characteristics of the confinement potential exert a substantial influence on the explored physical parameters. This research significantly advances our understanding of the interaction between impurities and intense fields, offering valuable insights into solid-state phenomena within low-dimensional systems. Consequently, it contributes to the design and fabrication of next-generation applications in the field of quantum well systems, encompassing areas such as lighting, detection, information processing, sensing, and energy conversion.

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In this study, we investigated the influence of structural parameters, including active region dimensions, electric field intensity, In-composition, impurity position, and potential profiles, on the energy levels, sub-gap transitions, and photovoltaic characteristics of a p-GaN/i-(In, Ga)N/GaN-n (p-QW-n) structure. The finite element method (FEM) has been used to solve numerically the Schrödinger equation. We found that particle and sub-gap energy levels are susceptible to well width, electric field, and impurity position. Particle energy decreases with increasing well size and electric field intensity, while impurity position affects energy based on proximity to the well center. Potential profile shapes, such as rectangular (RQW) and parabolic (PQW), also play a significant role, with PQW profiles providing stronger particle confinement. IB width increases with electric field intensity and saturates at higher In-content. Voc increases with field strength but decreases with In-content, and the parabolic profile yields higher efficiency than the rectangular one. Photovoltaic efficiency is improved with an appropriately oriented electric field and decreases with higher In-content and field intensity. These findings highlight the critical role of structural parameters in optimizing QW-IBSC performance.@en

This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.@en

The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombination, and interface polarization is proposed to examine the solar cells' performance numerically. The functioning processes of n-In_0.42Ga_0.58N/i-(In, Ga)N/p-In_0.42Ga_0.58N solar cells at room temperature were investigated by calculating their characteristics for the AM1.5D, AM1.5G, and AM0 American Society for Testing and Materials experimental data. Our results show that the indium content, thickness, and defect density of the intrinsic layer strongly influence the characteristics of the InGaN solar cells. As the In-mole fraction increases, V_oc, FF and efficiency diminish to reach an independent regime for high In-content. A higher-quality 2μm−In_0.43Ga_0.57N for 10¹⁴cm⁻³ defect concentration can exhibit as high an efficiency as ≅11.3%, dropping to ≅4.12% for 10¹⁶cm⁻³ one.

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This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework incorporates higher-order anharmonic terms, specifically quartic and sextic terms. The solutions to the Schrödinger equation have been computed employing the finite element method and the effective mass theory. Moreover, linear and third-order nonlinear optical absorption coefficients are derived via a density matrix expansion. Our analysis reveals the feasibility of manipulating electronic and optical properties by adjusting confinement potential parameters, system attributes, and laser field intensity. In addition, the ILF induces remarkable modifications, characterized by reduced resonance peak amplitudes and a blue shift in absorption coefficients. Intriguingly, regardless of potential harmonicity, the impact of incident electromagnetic intensity is notably more pronounced in the absence of the ILF. These findings hold significant promise for advancing theoretical predictions, providing valuable insights into the intricate interplay between confinement potentials, laser fields, and their effects on electronic and optical behaviors within nanostructures.

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The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.

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Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.@en

This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are 5.3×108,5.3×1010,5×1011,5×1012, and 5×1013 protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.@en

In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabolic, and triangular finite potential confinements, the ground and the two lowest excited states binding energies are investigated. Regardless of the shape, our findings show that the size, temperature, and applied electric field induce huge impacts on the binding energy. It reveals that the binding energy (1) is higher in rectangular shape than for other forms, (2) is reduced as the temperature and/or electric field are increased, and (3) is less sensitive to temperature and applied electric field in rectangular confinement compared to other profiles. The results we obtained are very consistent with the literature findings.

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