InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.@en

Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF_3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.

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The optoelectronic properties of colloidal quantum dots (cQDs) depend critically on the absolute energy of the conduction and valence band edges. It is well known these band-edge energies are sensitive to the ligands on the cQD surface, but it is much less clear how they depend on other experimental conditions, like solvation. Here, we experimentally determine the band-edge positions of thin films of PbS and ZnO cQDs via spectroelectrochemical measurements. To achieve this, we first carefully evaluate and optimize the electrochemical injection of electrons and holes into PbS cQDs. This results in electrochemically fully reversible electron injection with >8 electrons per PbS cQDs, allowing the quantitative determination of the conduction band energy for PbS cQDs with various diameters and surface compositions. Surprisingly, we find that the band-edge energies shift by nearly 1 eV in the presence of different solvents, a result that also holds true for ZnO cQDs. We argue that complexation and partial charge transfer between solvent and surface ions are responsible for this large effect of the solvent on the band-edge energy. The trend in the energy shift matches the results of density functional theory (DFT) calculations in explicit solvents and scales with the energy of complexation between surface cations and solvents. As a first approximation, the solvent Lewis basicity can be used as a good descriptor to predict the shift of the conduction and valence band edges of solvated cQDs.

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Owing to their tunable band gap, high absorption coefficient, narrow emission linewidths and unrestricted composition, InP-based colloidal quantum dots (QDs) have become industrially relevant for visible and near-infrared photonic technologies. Although their development has so far been strongly driven by their suitability for green and red light-emitting diodes, the spectrum of applications for this class of materials is much broader. This Review covers the multidisciplinary field of InP-based QDs from its genesis in the mid-1990s to date, drawing on relevant knowledge from other classes of QDs and from III–V semiconductors as a whole. We discuss the optoelectronic properties of InP QDs, their fabrication, their defects and passivation strategies and the design of InP-based QD heterostructures. Finally, we outline the technological status of these QDs for various photonic applications.

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Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.

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We present a strategy to actively engineer long-range charge transport in colloidal quantum dot assemblies by using ligand functionalities that introduce electronic states and provide a path for carrier transfer. This is a shift away from the use of inactive spacers to modulate charge transport through the lowering of the tunneling barrier for interparticle carrier transfer. This is accomplished with the use of electronically coupled redox ligands by which a self-exchange chain reaction takes place and long-range charge transport is enabled across the film. We identified the different modes of charge transport in these quantum dot/redox ligand assemblies, their energetic position and kinetics, and explain how to rationally manipulate them through modulation of the Fermi level and redox ligand coverage.

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