InP colloidal quantum dots for visible and near-infrared photonics

Review (2023)

Authors

G.P.F. Gonçalves Pereira Fonseca DeAl ChemE/Opto-electronic Materials - AS
R.F. Ubbink ChemE/Opto-electronic Materials - AS
M. Stam ChemE/Opto-electronic Materials - AS
I. du Fossé ChemE/Opto-electronic Materials - AS
A.J. Houtepen ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
Copyright: © 2023 G.P.F. Gonçalves Pereira Fonseca DeAl, R.F. Ubbink, M. Stam, I. du Fossé, A.J. Houtepen
DOI: https://doi.org/10.1038/s41578-023-00596-4
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Published Date

2023

Language

English

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

Owing to their tunable band gap, high absorption coefficient, narrow emission linewidths and unrestricted composition, InP-based colloidal quantum dots (QDs) have become industrially relevant for visible and near-infrared photonic technologies. Although their development has so far been strongly driven by their suitability for green and red light-emitting diodes, the spectrum of applications for this class of materials is much broader. This Review covers the multidisciplinary field of InP-based QDs from its genesis in the mid-1990s to date, drawing on relevant knowledge from other classes of QDs and from III–V semiconductors as a whole. We discuss the optoelectronic properties of InP QDs, their fabrication, their defects and passivation strategies and the design of InP-based QD heterostructures. Finally, we outline the technological status of these QDs for various photonic applications.

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