BZ
Banghong Zhang
2 records found
1
Erratum
Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)
The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to
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Recent research focusing on wide-bandgap and two-dimensional materials with a Schottky junction has provided a new concept for ultraviolet photodetectors. However, the working mechanism of the Schottky junction-based detector varies depending on the photosensitive materials used
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