Erratum

Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)

Journal article (2023)

Authors

Teng Zhan Chinese Academy of Sciences, University of Chinese Academy of Sciences
Jianwen Sun Tsinghua University
Tao Feng Chinese Academy of Sciences, University of Chinese Academy of Sciences
Yulong Zhang Tsinghua University
Binru Zhou University of Chinese Academy of Sciences, Chinese Academy of Sciences
Banghong Zhang University of Chinese Academy of Sciences, Chinese Academy of Sciences
Junxi Wang Chinese Academy of Sciences, University of Chinese Academy of Sciences
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
More Authors... External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2023 Teng Zhan, Jianwen Sun, Tao Feng, Yulong Zhang, Binru Zhou, Banghong Zhang, Junxi Wang, Pasqualina M Sarro, Kouchi Zhang, More Authors
DOI: https://doi.org/10.1039/d3tc90039h
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Published Date

2023

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to 1 V) before the current is fully turned on.’’ This change does not affect the main conclusions of the manuscript. The authors would like to apologize for any inconvenience caused. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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