Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Conference paper (2021)

Authors

J. Romijn Electronic Components, Technology and Materials -

L.M. Middelburg Electronic Components, Technology and Materials -

S. Vollebregt Electronic Components, Technology and Materials -

B. el Mansouri Electronic Components, Technology and Materials -

H.W. van Zeijl Electronic Components, Technology and Materials -

Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Tobias Erlbacher Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Kouchi Zhang Electronic Components, Technology and Materials -

Pasqualina M Sarro Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1109/SENSORS47087.2021.9639845

Silicon carbide Temperature sensor SiC CMOS Wide bandgap semiconductors 4H-SiC

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Published Date

2021

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.

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