Mega infrastructure projects provide a basic guarantee for social development, economic construction, and livelihood improvement. Their operation and maintenance (O&M) management are of great significance for the smooth operation and the realization of the value created by the projects. In order to provide an approach for effectively evaluating O&M management, this study develops a holistic indicator system using a mixed-review method from the national macro perspective in China. In this study, literature analysis, policy texts, expert interviews, and grounded theory were used to collect relevant data at home and abroad, and establish an initial evaluation indicator system with 23 indicators covering two dimensions and five aspects. Then the questionnaire survey and factor analysis were used to score and categorize the indicators, and finally an evaluation indicator system for O&M management of mega infrastructure projects was formed. The results show that social relations, environmental benefits, macro policy, and operational capacities play an important role in the evaluation of the O&M of mega infrastructure projects. This study helps the management team to avoid negative impacts in the O&M management of mega infrastructure projects and lays a theoretical foundation for future research. The indicator system in this study is based on the Chinese context, and it remains to be verified whether the indicator system is applicable to other countries due to the differences in political and cultural backgrounds in different regions.

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The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high temperature. With increasing recess depth, the threshold voltage ( VTH ) shifted from -1.57 to 1.49 V. A shallow recess (5 nm) resulted in a 1.03 mA increase in signal variation ( Δ IDS ), while a deep recess (15 nm) resulted in the highest sensing response ( S ) of 145.8% towards 300 ppm H2 as compared to reference sensors without gate recess. Transient measurements demonstrated reversible H2 response for all tested devices. The response and recovery time towards 250 ppm gradually decreased from 7.3 to 2.5 min and from 29.2 to 8.85 min going from 0 nm to 15 nm recess depth. The power consumption of the sensors reduced with increasing recess depth from 146.6 to 2.95 mW.

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In this paper, a method to extend the detection range of hydrogen sulfide (H₂S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H₂S exposure in dry air. A pre-treatment using H₂ pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H₂ treated H₂S gas sensor was able to detect a higher H₂S concentration up to 90 ppm at 250 °C without complete saturation.

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AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.@en

Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (20/110/40/50 nm) stacks, respectively. It also shows that the substrate material and epitaxial structure play an important role in ohmic contact engineering. For CMOS compatible Au-free structures, the Ti/Al/W (20/100/30 nm), Ti/Al/Ni/W (20/100/20/10 nm) and (20/100/10/20 nm) are demonstrated with the minimum contact resistance values of 0.45, 1.3, and 1.6 Ω·mm, respectively. The three metal stacks of Au-free ohmic contact are compared and obtained results are explained.

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